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Samsung M3 78T5663RZ3-CF7 2GB
G Skill Intl F4-3200C16-16GTZN 16GB

Samsung M3 78T5663RZ3-CF7 2GB vs G Skill Intl F4-3200C16-16GTZN 16GB

Overall score
star star star star star
Samsung M3 78T5663RZ3-CF7 2GB

Samsung M3 78T5663RZ3-CF7 2GB

Overall score
star star star star star
G Skill Intl F4-3200C16-16GTZN 16GB

G Skill Intl F4-3200C16-16GTZN 16GB

Differences Specifications Comments

Differences

Samsung M3 78T5663RZ3-CF7 2GB Reasons to consider
Samsung M3 78T5663RZ3-CF7 2GB
Report a bug
  • Faster reading speed, GB/s
    4 left arrow 17.8
    Average value in the tests
  • Faster write speed, GB/s
    2,784.6 left arrow 14.3
    Average value in the tests
G Skill Intl F4-3200C16-16GTZN 16GB Reasons to consider
G Skill Intl F4-3200C16-16GTZN 16GB
Report a bug
  • Below the latency in the PassMark tests, ns
    30 left arrow 65
    Around -117% lower latency
  • Higher memory bandwidth, mbps
    17000 left arrow 6400
    Around 2.66 higher bandwidth

Specifications

Complete list of technical specifications
Samsung M3 78T5663RZ3-CF7 2GB
G Skill Intl F4-3200C16-16GTZN 16GB
Main characteristics
  • Memory type
    DDR2 left arrow DDR4
  • Latency in PassMark, ns
    65 left arrow 30
  • Read speed, GB/s
    4,806.8 left arrow 17.8
  • Write speed, GB/s
    2,784.6 left arrow 14.3
  • Memory bandwidth, mbps
    6400 left arrow 17000
Other
  • Description
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • Timings / Clock speed
    5-5-5-15 / 800 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • Ranking PassMark (The more the better)
    932 left arrow 3568

Samsung M3 78T5663RZ3-CF7 2GB RAM comparisons

Samsung M3 78T5663FB3-CF7 2GB
AMD R332G1339U1S 2GB

G Skill Intl F4-3200C16-16GTZN 16GB RAM comparisons

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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