RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M378B5773DH0-CH9 2GB
Corsair CM4X16GC3200C16K2E 16GB
Compare
Samsung M378B5773DH0-CH9 2GB vs Corsair CM4X16GC3200C16K2E 16GB
Overall score
Samsung M378B5773DH0-CH9 2GB
Overall score
Corsair CM4X16GC3200C16K2E 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M378B5773DH0-CH9 2GB
Report a bug
Reasons to consider
Corsair CM4X16GC3200C16K2E 16GB
Report a bug
Below the latency in the PassMark tests, ns
32
39
Around -22% lower latency
Faster reading speed, GB/s
17.3
11.7
Average value in the tests
Faster write speed, GB/s
13.4
7.2
Average value in the tests
Higher memory bandwidth, mbps
17000
10600
Around 1.6 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M378B5773DH0-CH9 2GB
Corsair CM4X16GC3200C16K2E 16GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
39
32
Read speed, GB/s
11.7
17.3
Write speed, GB/s
7.2
13.4
Memory bandwidth, mbps
10600
17000
Other
Description
PC3-10600, 1.5V, CAS Supported: 6 7 8 9
PC4-17000, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
Timings / Clock speed
7-7-7-20 / 1333 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
1749
3422
Samsung M378B5773DH0-CH9 2GB RAM comparisons
Samsung M378B5673FH0-CH9 2GB
Samsung M378B5773CH0-CH9 2GB
Corsair CM4X16GC3200C16K2E 16GB RAM comparisons
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Kingston ACR512X64D3S13C9G 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Samsung M378B5773DH0-CH9 2GB
Corsair CM4X16GC3200C16K2E 16GB
Kingston KHX1600C9D3/8G 8GB
V-GEN D4H4GS24A8 4GB
G Skill Intl F3-2400C11-8GSR 8GB
Crucial Technology BL8G30C15U4BL.M8FE1 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
SanMax Technologies Inc. SMD4-U16G48MB-24R 16GB
A-DATA Technology DOVF1B163G2G 2GB
Kingston KC5N22-MIE 16GB
G Skill Intl F3-12800CL7-4GBXM 4GB
Apacer Technology 78.C1GMW.AUC0B 8GB
G Skill Intl F3-14900CL9-4GBSR 4GB
Netac Technology Co Ltd EKBLACK4083016A 8GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
G Skill Intl F4-2666C18-16GRS 16GB
A-DATA Technology AM2L16BC4R1-B0AS 4GB
Crucial Technology CT4G4DFS8213.C8FBD2 4GB
SK Hynix HMT351U6CFR8C-H9 4GB
G Skill Intl F4-3000C16-8GTRG 8GB
SK Hynix HMT325S6BFR8C-H9 2GB
SK Hynix HMT351S6CFR8A-PB 4GB
A-DATA Technology DOVF1B163G2G 2GB
Micron Technology 16ATF2G64HZ-2G6J1 16GB
AMD R538G1601U2S 8GB
Kingston 9905624-013.A00G 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
ATP Electronics Inc. X4C16QE8BNRCME-E-LI1 16GB
Report a bug
×
Bug description
Source link