RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
TwinMOS 8DHE3MN8-HATP 2GB
Crucial Technology CT8G4DFS824A.C8FDD1 8GB
Compare
TwinMOS 8DHE3MN8-HATP 2GB vs Crucial Technology CT8G4DFS824A.C8FDD1 8GB
Overall score
TwinMOS 8DHE3MN8-HATP 2GB
Overall score
Crucial Technology CT8G4DFS824A.C8FDD1 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
TwinMOS 8DHE3MN8-HATP 2GB
Report a bug
Faster reading speed, GB/s
3
14.5
Average value in the tests
Faster write speed, GB/s
870.4
10.5
Average value in the tests
Reasons to consider
Crucial Technology CT8G4DFS824A.C8FDD1 8GB
Report a bug
Below the latency in the PassMark tests, ns
38
87
Around -129% lower latency
Higher memory bandwidth, mbps
19200
5300
Around 3.62 higher bandwidth
Specifications
Complete list of technical specifications
TwinMOS 8DHE3MN8-HATP 2GB
Crucial Technology CT8G4DFS824A.C8FDD1 8GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
87
38
Read speed, GB/s
3,155.6
14.5
Write speed, GB/s
870.4
10.5
Memory bandwidth, mbps
5300
19200
Other
Description
PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
Timings / Clock speed
5-5-5-15 / 667 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
417
2659
TwinMOS 8DHE3MN8-HATP 2GB RAM comparisons
takeMS International AG TMS1GB264D083805EV 1GB
Ramaxel Technology RML1520AG38D6F-667 512MB
Crucial Technology CT8G4DFS824A.C8FDD1 8GB RAM comparisons
Samsung M395T2863QZ4-CF76 1GB
Kingston 9905403-444.A00LF 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Crucial Technology CT25664BA160B.C16F 2GB
ACPI Digital Co. Ltd. CMA6-4FA01AAR01A00 4GB
AMD R5316G1609U2K 8GB
G Skill Intl F4-2800C15-4GTZB 4GB
Samsung M3 78T2863EHS-CF7 1GB
G Skill Intl F4-4000C18-32GTZR 32GB
Kingston KVR533D2N4 512MB
Shenzhen Xingmem Technology Corp 16GB
Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
Essencore Limited IM44GU48N21-FFFHM 4GB
G Skill Intl F2-9600CL6-2GBRH 2GB
Shenzhen Xingmem Technology Corp 16GB
Samsung 1600 CL10 Series 8GB
SK Hynix HMA81GU6DJR8N-WM 8GB
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
G Skill Intl F4-3000C15-8GVR 8GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Super Talent F26UB16GH 16GB
Patriot Memory (PDP Systems) PSD34G16002 4GB
Crucial Technology BLS8G4D240FSB.16FAR 8GB
A-DATA Technology DQVE1908 512MB
Corsair CMK4GX4M1D2400C14 4GB
Kingston 9965525-155.A00LF 8GB
Kingston KHX2666C16D4/16GX 16GB
PNY Electronics PNY 2GB
Kingston KHX2933C17D4/8G 8GB
Kingston ACR512X64D3S13C9G 4GB
Xinshirui (Shenzhen) Electronics Co V01D4L84GB528528266
Report a bug
×
Bug description
Source link