Samsung M3 78T3354BZ0-CCC 256MB vs G Skill Intl F4-3200C16-16GIS 16GB

Note globale

Samsung M3 78T3354BZ0-CCC 256MB

Samsung M3 78T3354BZ0-CCC 256MB

Note globale

G Skill Intl F4-3200C16-16GIS 16GB

G Skill Intl F4-3200C16-16GIS 16GB

Différences Spécifications Commentaires

Différences

Samsung M3 78T3354BZ0-CCC 256MB

Raisons de considérer
Samsung M3 78T3354BZ0-CCC 256MB

Signaler un bogue

Vitesse de lecture plus rapide, GB/s

2 18

Valeur moyenne dans les tests

G Skill Intl F4-3200C16-16GIS 16GB

Raisons de considérer
G Skill Intl F4-3200C16-16GIS 16GB

Signaler un bogue

En dessous de la latence dans les tests PassMark, ns

28 46

Autour de -64% latence réduite
Vitesse d'écriture plus rapide, GB/s

14.1 1,519.2

Valeur moyenne dans les tests
Bande passante mémoire plus élevée, mbps

17000 3200

Autour de 5.31 bande passante supérieure

Spécifications

Liste complète des spécifications techniques

Samsung M3 78T3354BZ0-CCC 256MB

G Skill Intl F4-3200C16-16GIS 16GB

Principales caractéristiques

Type de mémoire

DDR2 DDR4
Latence dans PassMark, ns

46 28
Vitesse de lecture, GB/s

2,909.8 18.0
Vitesse d'écriture, GB/s

1,519.2 14.1
Largeur de bande de la mémoire, mbps

3200 17000

Other

Description

PC2-3200, SSTL 1.8V, CAS Supported: 3 4 5 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
Timings / Vitesse d'horloge

3-3-3-12 / 400 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Classement PassMark (Plus il y en a, mieux c'est)

241 3537

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

Dernières comparaisons

Kingston 99U5595-005.A00LF 2GB

Kingston 99U5595-005.A00LF 2GB

Crucial Technology CT4G4DFS824A.C8FE 4GB

Crucial Technology CT4G4DFS824A.C8FE 4GB

G Skill Intl F3-1333C9-4GIS 4GB

G Skill Intl F3-1333C9-4GIS 4GB

SpecTek Incorporated 16G 2666 CL 19 16GB

SpecTek Incorporated 16G 2666 CL 19 16GB

Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB

Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C

Shenzhen Xingmem Technology Corp CM4X8GF2400C1XMP 8GB

Shenzhen Xingmem Technology Corp CM4X8GF2400C1XMP 8GB

Ramos Technology EWB8GB681CA3-16IC 8GB

Ramos Technology EWB8GB681CA3-16IC 8GB

Avexir Technologies Corporation DDR4-2666 CL15 8GB 8GB

Avexir Technologies Corporation DDR4-2666 CL15 8GB 8GB

SK Hynix HMT41GS6AFR8A-PB 8GB

SK Hynix HMT41GS6AFR8A-PB 8GB

Crucial Technology CT8G4DFS8266.M8FD 8GB

Crucial Technology CT8G4DFS8266.M8FD 8GB

G Skill Intl F2-8500CL5-2GBPI 2GB

G Skill Intl F2-8500CL5-2GBPI 2GB

AMD R748G2400U2S-UO 8GB

AMD R748G2400U2S-UO 8GB

A-DATA Technology DQVE1908 512MB

A-DATA Technology DQVE1908 512MB

Corsair CMRX8GD3000C16R4D 8GB

Corsair CMRX8GD3000C16R4D 8GB

Apacer Technology 78.B1GET.AU00C 4GB

Apacer Technology 78.B1GET.AU00C 4GB

Crucial Technology CT16G4SFRA32A.C16FJ 16GB

Crucial Technology CT16G4SFRA32A.C16FJ 16GB

Crucial Technology CT16G4SFD8266.M16FE 16GB

Crucial Technology CT16G4SFD8266.M16FE 16GB

Crucial Technology CT16G4SFRA266.C8FE 16GB

Crucial Technology CT16G4SFRA266.C8FE 16GB

A-DATA Technology DQKD1A08 1GB

A-DATA Technology DQKD1A08 1GB

Crucial Technology CT16G4SFD832A.M16FRS 16GB

Crucial Technology CT16G4SFD832A.M16FRS 16GB

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

A-DATA Technology AE4S240038G17-BHYA 8GB

A-DATA Technology AE4S240038G17-BHYA 8GB

Kingston 99U5403-465.A00LF 8GB

Kingston 99U5403-465.A00LF 8GB

Avexir Technologies Corporation DDR4-3600 CL17 8GB 8GB

Avexir Technologies Corporation DDR4-3600 CL17 8GB 8GB

A-DATA Technology AD73I1B1672EG 2GB

A-DATA Technology AD73I1B1672EG 2GB

Crucial Technology BLE8G4D32BEEAK.K8FB 8GB

Crucial Technology BLE8G4D32BEEAK.K8FB 8GB

Crucial Technology CT102464BA160B.M16 8GB

Crucial Technology CT102464BA160B.M16 8GB

G Skill Intl F4-2933C16-16GTZRX 16GB

G Skill Intl F4-2933C16-16GTZRX 16GB