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Nanya Technology M2S8G64CC8HB5N-DI 8GB
AMD R538G1601S2LS 8GB

Nanya Technology M2S8G64CC8HB5N-DI 8GB vs AMD R538G1601S2LS 8GB

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Nanya Technology M2S8G64CC8HB5N-DI 8GB

Nanya Technology M2S8G64CC8HB5N-DI 8GB

Punteggio complessivo
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AMD R538G1601S2LS 8GB

AMD R538G1601S2LS 8GB

Differenze Specifiche tecniche Commenti

Differenze

Nanya Technology M2S8G64CC8HB5N-DI 8GB Motivi da considerare
Nanya Technology M2S8G64CC8HB5N-DI 8GB
Segnala un bug
  • Velocità di lettura più elevata, GB/s
    11.8 left arrow 11.3
    Valore medio nei test
AMD R538G1601S2LS 8GB Motivi da considerare
AMD R538G1601S2LS 8GB
Segnala un bug
  • Al di sotto della latenza nei test PassMark, ns
    28 left arrow 42
    Intorno -50% latenza inferiore
  • Velocità di scrittura più elevata, GB/s
    8.2 left arrow 7.7
    Valore medio nei test

Specifiche tecniche

Elenco completo delle specifiche tecniche
Nanya Technology M2S8G64CC8HB5N-DI 8GB
AMD R538G1601S2LS 8GB
Caratteristiche principali
  • Tipo di memoria
    DDR3 left arrow DDR3
  • Latenza in PassMark, ns
    42 left arrow 28
  • Velocità di lettura, GB/s
    11.8 left arrow 11.3
  • Velocità di scrittura, GB/s
    7.7 left arrow 8.2
  • Larghezza di banda della memoria, mbps
    12800 left arrow 12800
Other
  • Descrizione
    PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 left arrow PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11
  • Temporizzazioni / Velocità di clock
    9-9-9-24 / 1600 MHz left arrow 9-9-9-24 / 1600 MHz
  • Classifica PassMark (più sono, meglio è)
    2075 left arrow 1793

Nanya Technology M2S8G64CC8HB5N-DI 8GB Confronto tra le RAM

Samsung M391A1G43EB1-CPB 8GB

AMD R538G1601S2LS 8GB Confronto tra le RAM

Kingston 9905403-061.A00LF 2GB
Kingston HP691160-H63-KEB 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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Ultimi confronti

Nanya Technology M2S8G64CC8HB5N-DI 8GB
Nanya Technology M2S8G64CC8HB5N-DI 8GB
AMD R538G1601S2LS 8GB
AMD R538G1601S2LS 8GB
Memoria RAM
G Skill Intl F3-14900CL8-4GBXM 4GB
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Memoria RAM
Samsung M391B5673EH1-CH9 2GB
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Corsair CMK16GX4M2A2666C16 8GB
Corsair CMK16GX4M2A2666C16 8GB
Memoria RAM
Samsung DDR3 8GB 1600MHz 8GB
Samsung DDR3 8GB 1600MHz 8GB
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Micron Technology 8ATF1G64HZ-2G6H1 8GB
Memoria RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
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Memoria RAM
G Skill Intl F3-1333C9-4GIS 4GB
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Kingmax Semiconductor GLLH22F-18KII5------ 16GB
Kingmax Semiconductor GLLH22F-18KII5------ 16GB
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Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
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G Skill Intl F4-3600C16-8GTRG 8GB
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SK Hynix HMA82GS6CJR8N-VK 16GB
SK Hynix HMA82GS6CJR8N-VK 16GB
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Corsair CMSX64GX4M2A3200C22 32GB
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AMD R5316G1609U2K 8GB
AMD R5316G1609U2K 8GB
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Crucial Technology CT4G4DFS8266.C8FE 4GB
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Kingston ACR256X64D3S1333C9 2GB
Kingston ACR256X64D3S1333C9 2GB
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Memoria RAM
Samsung M3 78T5663RZ3-CE6 2GB
Samsung M3 78T5663RZ3-CE6 2GB
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Memoria RAM
Samsung M393B1G70QH0-YK0 8GB
Samsung M393B1G70QH0-YK0 8GB
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Corsair CMK8GX4M2B3000C15 4GB
Memoria RAM
Patriot Memory (PDP Systems) 1600 CL10 Series 8GB
Patriot Memory (PDP Systems) 1600 CL10 Series 8GB
Micron Technology 16ATF2G64HZ-2G3B1 16GB
Micron Technology 16ATF2G64HZ-2G3B1 16GB
Memoria RAM