Samsung M378B2873FHS-CH9 1GB vs AMD R334G1339U2S 4GB

Punteggio complessivo

Samsung M378B2873FHS-CH9 1GB

Samsung M378B2873FHS-CH9 1GB

Punteggio complessivo

AMD R334G1339U2S 4GB

AMD R334G1339U2S 4GB

Differenze Specifiche tecniche Commenti

Differenze

Samsung M378B2873FHS-CH9 1GB

Motivi da considerare
Samsung M378B2873FHS-CH9 1GB

Al di sotto della latenza nei test PassMark, ns

22 29

Intorno 24% latenza inferiore
Velocità di lettura più elevata, GB/s

12.7 9

Valore medio nei test
Velocità di scrittura più elevata, GB/s

7.5 4.8

Valore medio nei test

AMD R334G1339U2S 4GB

Motivi da considerare
AMD R334G1339U2S 4GB

Specifiche tecniche

Elenco completo delle specifiche tecniche

Samsung M378B2873FHS-CH9 1GB

AMD R334G1339U2S 4GB

Caratteristiche principali

Tipo di memoria

DDR3 DDR3
Latenza in PassMark, ns

22 29
Velocità di lettura, GB/s

12.7 9.0
Velocità di scrittura, GB/s

7.5 4.8
Larghezza di banda della memoria, mbps

10600 10600

Other

Descrizione

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC3-10600, 1.5V, CAS Supported: 6 7 8 9
Temporizzazioni / Velocità di clock

7-7-7-20 / 1333 MHz 7-7-7-20 / 1333 MHz
Classifica PassMark (più sono, meglio è)

1175 1726

RAM Latency Calculator

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RAM 2

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Ultimi confronti

Samsung M378B2873FHS-CH9 1GB

Samsung M378B2873FHS-CH9 1GB

AMD R334G1339U2S 4GB

AMD R334G1339U2S 4GB

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UMAX Technology D4-2133-4GB-512X8-L 4GB

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Crucial Technology CT51264BD160B.C16F 4GB

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Apacer Technology 78.C1GMW.AZC0B 8GB

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Patriot Memory (PDP Systems) PSD22G8002 2GB

Patriot Memory (PDP Systems) PSD22G8002 2GB

Crucial Technology BL4G24C16U4B.8FB 4GB

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Hexon Technology Pte Ltd HEXON 1GB

Hexon Technology Pte Ltd HEXON 1GB

Crucial Technology CT16G4DFD8266.C16FE 16GB

Crucial Technology CT16G4DFD8266.C16FE 16GB

Kingston KVR533D2N4 512MB

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Kingston KMKYF9-HYA 8GB

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Corsair CMK64GX4M4K3733C17 16GB

Corsair CMK64GX4M4K3733C17 16GB

G Skill Intl F4-3600C14-16GTRG 16GB

G Skill Intl F4-3600C14-16GTRG 16GB

Kingston 2GB-DDR2 800Mhz 2GB

Kingston 2GB-DDR2 800Mhz 2GB

Micron Technology 8ATF1G64HZ-2G3B1 8GB

Micron Technology 8ATF1G64HZ-2G3B1 8GB

Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB

Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8

Crucial Technology CT4G4DFS8266.M8FG 4GB

Crucial Technology CT4G4DFS8266.M8FG 4GB

Kingston KHX2133C11D3/4GX 4GB

Kingston KHX2133C11D3/4GX 4GB

Kingston 9905711-038.A00G 8GB

Kingston 9905711-038.A00G 8GB

Samsung M3 78T5663EH3-CF7 2GB

Samsung M3 78T5663EH3-CF7 2GB

Kingston CBD32D4S2D8HD-16 16GB

Kingston CBD32D4S2D8HD-16 16GB

Samsung M393B5170FH0-CK0 4GB

Samsung M393B5170FH0-CK0 4GB

Crucial Technology CT16G4SFD8213.C16FBR 16GB

Crucial Technology CT16G4SFD8213.C16FBR 16GB

Unifosa Corporation GU332G0ALEPR8H2C6F 2GB

Unifosa Corporation GU332G0ALEPR8H2C6F 2GB

Thermaltake Technology Co Ltd R017D408GX2-4400C19A 8GB

Thermaltake Technology Co Ltd R017D408GX2-4400C19A 8GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

Thermaltake Technology Co Ltd R009D408GX2-4000C19A 8GB

Thermaltake Technology Co Ltd R009D408GX2-4000C19A 8GB