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takeMS International AG TMS2GB264D083805EV 2GB
Micron Technology 8ATF1G64AZ-3G2R1 8GB

takeMS International AG TMS2GB264D083805EV 2GB vs Micron Technology 8ATF1G64AZ-3G2R1 8GB

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takeMS International AG TMS2GB264D083805EV 2GB

takeMS International AG TMS2GB264D083805EV 2GB

Punteggio complessivo
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Micron Technology 8ATF1G64AZ-3G2R1 8GB

Micron Technology 8ATF1G64AZ-3G2R1 8GB

Differenze Specifiche tecniche Commenti

Differenze

takeMS International AG TMS2GB264D083805EV 2GB Motivi da considerare
takeMS International AG TMS2GB264D083805EV 2GB
Segnala un bug
  • Velocità di lettura più elevata, GB/s
    3 left arrow 16.9
    Valore medio nei test
Micron Technology 8ATF1G64AZ-3G2R1 8GB Motivi da considerare
Micron Technology 8ATF1G64AZ-3G2R1 8GB
Segnala un bug
  • Al di sotto della latenza nei test PassMark, ns
    31 left arrow 50
    Intorno -61% latenza inferiore
  • Velocità di scrittura più elevata, GB/s
    12.4 left arrow 1,457.4
    Valore medio nei test

Specifiche tecniche

Elenco completo delle specifiche tecniche
takeMS International AG TMS2GB264D083805EV 2GB
Micron Technology 8ATF1G64AZ-3G2R1 8GB
Caratteristiche principali
  • Tipo di memoria
    DDR2 left arrow DDR4
  • Latenza in PassMark, ns
    50 left arrow 31
  • Velocità di lettura, GB/s
    3,757.3 left arrow 16.9
  • Velocità di scrittura, GB/s
    1,457.4 left arrow 12.4
  • Larghezza di banda della memoria, mbps
    6400 left arrow no data
Other
  • Descrizione
    PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5 left arrow , 1.20000005, CAS Supported:
  • Temporizzazioni / Velocità di clock
    5-5-5-15 / 800 MHz left arrow no data
  • Classifica PassMark (più sono, meglio è)
    557 left arrow 3043

takeMS International AG TMS2GB264D083805EV 2GB Confronto tra le RAM

Kingston 99P5316-014.A00LF 4GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Micron Technology 8ATF1G64AZ-3G2R1 8GB Confronto tra le RAM

V-Color Technology Inc. TL48G30S8KSRGB15 8GB
SK Hynix HMA851U6JJR6N-VK 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

Ultimi confronti

takeMS International AG TMS2GB264D083805EV 2GB
takeMS International AG TMS2GB264D083805EV 2GB
Micron Technology 8ATF1G64AZ-3G2R1 8GB
Micron Technology 8ATF1G64AZ-3G2R1 8GB
Memoria RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
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Corsair CMK8GX4M2A2133C13 4GB
Memoria RAM
Crucial Technology CT51264BD1339.M16F 4GB
Crucial Technology CT51264BD1339.M16F 4GB
Micron Technology 16ATF1G64AZ-2G1A1 8GB
Micron Technology 16ATF1G64AZ-2G1A1 8GB
Memoria RAM
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Nanya Technology NT2GT64U8HD0BN-AD 2GB
Micron Technology TEAMGROUP-UD4-3000 16GB
Micron Technology TEAMGROUP-UD4-3000 16GB
Memoria RAM
Kingston 9905584-016.A00LF 4GB
Kingston 9905584-016.A00LF 4GB
SK Hynix HMA82GR7MFR4N-UH 16GB
SK Hynix HMA82GR7MFR4N-UH 16GB
Memoria RAM
SK Hynix HYMP112U64CP8-S5 1GB
SK Hynix HYMP112U64CP8-S5 1GB
Micron Technology 18ASF2G72PDZ-2G3D1 16GB
Micron Technology 18ASF2G72PDZ-2G3D1 16GB
Memoria RAM
Samsung M391B5673EH1-CH9 2GB
Samsung M391B5673EH1-CH9 2GB
Gold Key Technology Co Ltd NMUD480E85-3000D 8GB
Gold Key Technology Co Ltd NMUD480E85-3000D 8GB
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Kingston KHX3200C18D4/8G 8GB
Kingston KHX3200C18D4/8G 8GB
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Samsung M391B5673EH1-CH9 2GB
Samsung M391B5673EH1-CH9 2GB
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Gloway International Co. Ltd. TYA4U2666D19321C 32GB
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Samsung 1600 CL10 Series 8GB
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Kingston ACR24D4U7D8MB-16 16GB
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Kingston HX316C10F/8 8GB
Wilk Elektronik S.A. IRX3000D464L16S/8G 8GB
Wilk Elektronik S.A. IRX3000D464L16S/8G 8GB
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Crucial Technology CT25664BA160B.C16F 2GB
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Patriot Memory (PDP Systems) PSD48G240082 8GB
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Samsung M3 78T2863EHS-CF7 1GB
Samsung M3 78T2863EHS-CF7 1GB
Micron Technology 4ATF1G64AZ-3G2E1 8GB
Micron Technology 4ATF1G64AZ-3G2E1 8GB
Memoria RAM