Kingston KVR533D2N4 512MB vs Shanghai Kuxin Microelectronics Ltd NMUD440D82-2400E 4GB

総合得点

Kingston KVR533D2N4 512MB

Kingston KVR533D2N4 512MB

総合得点

Shanghai Kuxin Microelectronics Ltd NMUD440D82-2400E 4GB

Shanghai Kuxin Microelectronics Ltd NMUD440D82-2400E 4GB

相違点仕様コメント

相違点

Kingston KVR533D2N4 512MB

考慮すべき理由
Kingston KVR533D2N4 512MB

バグを報告する

Shanghai Kuxin Microelectronics Ltd NMUD440D82-2400E 4GB

考慮すべき理由
Shanghai Kuxin Microelectronics Ltd NMUD440D82-2400E 4GB

バグを報告する

PassMarkテストでのレイテンシー以下、ns

31 75

周辺 -142% 低遅延
読み出し速度の高速化、GB/s

12.5 1

テスト平均値
書き込み速度の高速化、GB/s

9.4 1,672.1

テスト平均値
より高いメモリ帯域幅、mbps

19200 4200

周辺 4.57 高帯域

仕様

技術仕様の完全リスト

Kingston KVR533D2N4 512MB

Shanghai Kuxin Microelectronics Ltd NMUD440D82-2400E 4GB

主な特徴

メモリータイプ

DDR2 DDR4
PassMarkにおけるレイテンシー、ns

75 31
読み出し速度、GB/s

1,943.5 12.5
書き込み速度、GB/秒

1,672.1 9.4
メモリ帯域幅、mbps

4200 19200

Other

商品説明

PC2-4200, SSTL 1.8V, CAS Supported: 3 4 5 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
タイミング / クロック速度

4-4-4-12 / 533 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
ランキングPassMark（多ければ多いほど良い）

301 2361

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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