Micron Technology 16HTF25664AY-800E1 2GB vs A-DATA Technology AD4S3200316G22-BHYD 16GB

総合得点

Micron Technology 16HTF25664AY-800E1 2GB

Micron Technology 16HTF25664AY-800E1 2GB

総合得点

A-DATA Technology AD4S3200316G22-BHYD 16GB

A-DATA Technology AD4S3200316G22-BHYD 16GB

相違点仕様コメント

相違点

Micron Technology 16HTF25664AY-800E1 2GB

考慮すべき理由
Micron Technology 16HTF25664AY-800E1 2GB

バグを報告する

PassMarkテストでのレイテンシー以下、ns

61 66

周辺 8% 低遅延
読み出し速度の高速化、GB/s

4 13.9

テスト平均値
書き込み速度の高速化、GB/s

2,225.6 13.2

テスト平均値

A-DATA Technology AD4S3200316G22-BHYD 16GB

考慮すべき理由
A-DATA Technology AD4S3200316G22-BHYD 16GB

バグを報告する

より高いメモリ帯域幅、mbps

25600 6400

周辺 4 高帯域

仕様

技術仕様の完全リスト

Micron Technology 16HTF25664AY-800E1 2GB

A-DATA Technology AD4S3200316G22-BHYD 16GB

主な特徴

メモリータイプ

DDR2 DDR4
PassMarkにおけるレイテンシー、ns

61 66
読み出し速度、GB/s

4,369.2 13.9
書き込み速度、GB/秒

2,225.6 13.2
メモリ帯域幅、mbps

6400 25600

Other

商品説明

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
タイミング / クロック速度

5-5-5-15 / 800 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
ランキングPassMark（多ければ多いほど良い）

752 2429

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新の比較

Samsung M393B5270CH0-CH9 4GB

Samsung M393B5270CH0-CH9 4GB

Corsair CMK16GX4M2Z2933C16 8GB

Corsair CMK16GX4M2Z2933C16 8GB

A-DATA Technology VDQVE1B16 2GB

A-DATA Technology VDQVE1B16 2GB

Crucial Technology CT4G4SFS8213.C8FADP 4GB

Crucial Technology CT4G4SFS8213.C8FADP 4GB

SK Hynix HMA851S6AFR6N-UH 4GB

SK Hynix HMA851S6AFR6N-UH 4GB

Crucial Technology CT8G48C40U5.M4A1 8GB

Crucial Technology CT8G48C40U5.M4A1 8GB

Kingston 99U5474-013.A00LF 2GB

Kingston 99U5474-013.A00LF 2GB

Kingston KHX3466C17D4/16GX 16GB

Kingston KHX3466C17D4/16GX 16GB

Patriot Memory (PDP Systems) PSD22G8002 2GB

Patriot Memory (PDP Systems) PSD22G8002 2GB

Micron Technology 16ATF2G64HZ-2G6J1 16GB

Micron Technology 16ATF2G64HZ-2G6J1 16GB

Samsung M378B5673EH1-CF8 2GB

Samsung M378B5673EH1-CF8 2GB

Crucial Technology BLS4G4D240FSB.8FARG? 4GB

Crucial Technology BLS4G4D240FSB.8FARG? 4GB

Nanya Technology NT2GT64U8HD0BY-AD 2GB

Nanya Technology NT2GT64U8HD0BY-AD 2GB

G Skill Intl F4-3000C15-4GVRB 4GB

G Skill Intl F4-3000C15-4GVRB 4GB

SpecTek Incorporated ?????????????????? 2GB

SpecTek Incorporated ?????????????????? 2GB

Hynix Semiconductor (Hyundai Electronics) HMA41GR7AFR8N-UH 8GB

Hynix Semiconductor (Hyundai Electronics) HMA41GR7AFR8N

Samsung M471B1G73QH0-YK0 8GB

Samsung M471B1G73QH0-YK0 8GB

Kingston HX426C16FB2/8-SP 8GB

Kingston HX426C16FB2/8-SP 8GB

Patriot Memory (PDP Systems) PSD22G8002 2GB

Patriot Memory (PDP Systems) PSD22G8002 2GB

Kingston 9905702-007.A00G 8GB

Kingston 9905702-007.A00G 8GB

Corsair CMD8GX3M2A2933C12 4GB

Corsair CMD8GX3M2A2933C12 4GB

Corsair CMK16GX4M4B3600C18 4GB

Corsair CMK16GX4M4B3600C18 4GB

TwinMOS 8DPT5MK8-TATP 2GB

TwinMOS 8DPT5MK8-TATP 2GB

Crucial Technology BLS8G4D32AESTK.M8FE 8GB

Crucial Technology BLS8G4D32AESTK.M8FE 8GB

A-DATA Technology AD73I1B1672EG 2GB

A-DATA Technology AD73I1B1672EG 2GB

Crucial Technology BLS4G4D240FSB.8FARG 4GB

Crucial Technology BLS4G4D240FSB.8FARG 4GB

Patriot Memory (PDP Systems) PSD34G16002 4GB

Patriot Memory (PDP Systems) PSD34G16002 4GB

Micron Technology 4ATF51264HZ-2G6E3 4GB

Micron Technology 4ATF51264HZ-2G6E3 4GB