Samsung M3 93T5750CZA-CE6 2GB vs Avexir Technologies Corporation DDR4-2666 CL17 4GB 4GB

総合得点

Samsung M3 93T5750CZA-CE6 2GB

Samsung M3 93T5750CZA-CE6 2GB

総合得点

Avexir Technologies Corporation DDR4-2666 CL17 4GB 4GB

Avexir Technologies Corporation DDR4-2666 CL17 4GB 4GB

相違点仕様コメント

相違点

Samsung M3 93T5750CZA-CE6 2GB

考慮すべき理由
Samsung M3 93T5750CZA-CE6 2GB

バグを報告する

読み出し速度の高速化、GB/s

3 17

テスト平均値
書き込み速度の高速化、GB/s

2,622.0 12.9

テスト平均値

Avexir Technologies Corporation DDR4-2666 CL17 4GB 4GB

考慮すべき理由
Avexir Technologies Corporation DDR4-2666 CL17 4GB 4GB

バグを報告する

PassMarkテストでのレイテンシー以下、ns

23 77

周辺 -235% 低遅延
より高いメモリ帯域幅、mbps

17000 5300

周辺 3.21 高帯域

仕様

技術仕様の完全リスト

Samsung M3 93T5750CZA-CE6 2GB

Avexir Technologies Corporation DDR4-2666 CL17 4GB 4GB

主な特徴

メモリータイプ

DDR2 DDR4
PassMarkにおけるレイテンシー、ns

77 23
読み出し速度、GB/s

3,405.2 17.0
書き込み速度、GB/秒

2,622.0 12.9
メモリ帯域幅、mbps

5300 17000

Other

商品説明

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-17000, 1.2V, CAS Supported: 12 14 15 16
タイミング / クロック速度

5-5-5-15 / 667 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
ランキングPassMark（多ければ多いほど良い）

763 2938

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

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RAM 2

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Absolute Latency

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