Samsung M471B5173DB0-YK0 4GB vs Chun Well Technology Holding Limited MD4U1636181DCW 16GB

総合得点

Samsung M471B5173DB0-YK0 4GB

Samsung M471B5173DB0-YK0 4GB

総合得点

Chun Well Technology Holding Limited MD4U1636181DCW 16GB

Chun Well Technology Holding Limited MD4U1636181DCW 16GB

相違点仕様コメント

相違点

Samsung M471B5173DB0-YK0 4GB

考慮すべき理由
Samsung M471B5173DB0-YK0 4GB

バグを報告する

Chun Well Technology Holding Limited MD4U1636181DCW 16GB

考慮すべき理由
Chun Well Technology Holding Limited MD4U1636181DCW 16GB

バグを報告する

PassMarkテストでのレイテンシー以下、ns

28 45

周辺 -61% 低遅延
読み出し速度の高速化、GB/s

18.1 12

テスト平均値
書き込み速度の高速化、GB/s

15.6 7.8

テスト平均値
より高いメモリ帯域幅、mbps

21300 12800

周辺 1.66 高帯域

仕様

技術仕様の完全リスト

Samsung M471B5173DB0-YK0 4GB

Chun Well Technology Holding Limited MD4U1636181DCW 16GB

主な特徴

メモリータイプ

DDR3 DDR4
PassMarkにおけるレイテンシー、ns

45 28
読み出し速度、GB/s

12.0 18.1
書き込み速度、GB/秒

7.8 15.6
メモリ帯域幅、mbps

12800 21300

Other

商品説明

PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
タイミング / クロック速度

9-9-9-24 / 1600 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
ランキングPassMark（多ければ多いほど良い）

1939 3693

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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