A-DATA Technology VDQVE1B16 2GB vs G Skill Intl F4-2400C16-8GFXR 8GB

Pontuação geral

A-DATA Technology VDQVE1B16 2GB

A-DATA Technology VDQVE1B16 2GB

Pontuação geral

G Skill Intl F4-2400C16-8GFXR 8GB

G Skill Intl F4-2400C16-8GFXR 8GB

Diferenças Especificações Comentários

Diferenças

A-DATA Technology VDQVE1B16 2GB

Razões a considerar
A-DATA Technology VDQVE1B16 2GB

Relatar um erro

Velocidade de leitura mais rápida, GB/s

4 13.8

Valor médio nos testes

G Skill Intl F4-2400C16-8GFXR 8GB

Razões a considerar
G Skill Intl F4-2400C16-8GFXR 8GB

Relatar um erro

Abaixo da latência nos testes do PassMark, ns

26 46

Por volta de -77% menor latência
Velocidade de escrita mais rápida, GB/s

9.2 2,061.2

Valor médio nos testes
Maior largura de banda de memória, mbps

19200 6400

Por volta de 3 maior largura de banda

Especificações

Lista completa de especificações técnicas

A-DATA Technology VDQVE1B16 2GB

G Skill Intl F4-2400C16-8GFXR 8GB

Características principais

Tipo de memória

DDR2 DDR4
Latência em PassMark, ns

46 26
Velocidade de leitura, GB/s

4,937.3 13.8
Velocidade de escrita, GB/s

2,061.2 9.2
Largura de banda de memória, mbps

6400 19200

Other

Descrição

PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5 PC4-19200, 1.2V, CAS Supported: 9 11 13 15 16
Tempos / Velocidade do relógio

5-5-5-15 / 800 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (Quanto mais, melhor)

759 2456

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

Últimas comparações

A-DATA Technology DOVF1B163G2G 2GB

A-DATA Technology DOVF1B163G2G 2GB

Corsair CM4X16GF3200C22S2 16GB

Corsair CM4X16GF3200C22S2 16GB

Crucial Technology CT51264BD1339.M16F 4GB

Crucial Technology CT51264BD1339.M16F 4GB

Samsung M378A5244CB0-CWE 4GB

Samsung M378A5244CB0-CWE 4GB

Kingston 99U5471-040.A00LF 8GB

Kingston 99U5471-040.A00LF 8GB

Kingston 99U5471-030.A00LF 8GB

Kingston 99U5471-030.A00LF 8GB

A-DATA Technology AD73I1B1672EG 2GB

A-DATA Technology AD73I1B1672EG 2GB

Kingston KF2666C16D4/8G 8GB

Kingston KF2666C16D4/8G 8GB

Samsung M3 78T3354BZ0-CCC 256MB

Samsung M3 78T3354BZ0-CCC 256MB

G Skill Intl F4-2400C16-4GRS 4GB

G Skill Intl F4-2400C16-4GRS 4GB

A-DATA Technology DQKD1A08 1GB

A-DATA Technology DQKD1A08 1GB

Apacer Technology GD2.1827CS.003 8GB

Apacer Technology GD2.1827CS.003 8GB

SK Hynix HYMP112U64CP8-S5 1GB

SK Hynix HYMP112U64CP8-S5 1GB

Patriot Memory (PDP Systems) 2800 C18 Series 16GB

Patriot Memory (PDP Systems) 2800 C18 Series 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

DSL Memory D4SS1G081SH24A-A 8GB

DSL Memory D4SS1G081SH24A-A 8GB

G Skill Intl F2-8500CL5-2GBPI 2GB

G Skill Intl F2-8500CL5-2GBPI 2GB

Patriot Memory (PDP Systems) PSD48G213382 8GB

Patriot Memory (PDP Systems) PSD48G213382 8GB

G Skill Intl F5-6400J3239G16G 16GB

G Skill Intl F5-6400J3239G16G 16GB

Corsair CMSX32GX4M2A2666C18 16GB

Corsair CMSX32GX4M2A2666C18 16GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Team Group Inc. TEAMGROUP-UD4-2800 8GB

Team Group Inc. TEAMGROUP-UD4-2800 8GB

Samsung M4 70T2953EZ3-CE6 1GB

Samsung M4 70T2953EZ3-CE6 1GB

Hynix Semiconductor (Hyundai Electronics) HMA451R7AFR8N-TF 4GB

Hynix Semiconductor (Hyundai Electronics) HMA451R7AFR8N

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Kingmax Semiconductor GLMH23F-18MCIA------ 16GB

Kingmax Semiconductor GLMH23F-18MCIA------ 16GB

Kingston 99U5584-004.A00LF 4GB

Kingston 99U5584-004.A00LF 4GB

Patriot Memory (PDP Systems) PSD48G213381S 8GB

Patriot Memory (PDP Systems) PSD48G213381S 8GB