Micron Technology 18HTF12872AY-800F1 1GB vs INTENSO M418039 8GB

Pontuação geral

Micron Technology 18HTF12872AY-800F1 1GB

Micron Technology 18HTF12872AY-800F1 1GB

Pontuação geral

INTENSO M418039 8GB

INTENSO M418039 8GB

Diferenças Especificações Comentários

Diferenças

Micron Technology 18HTF12872AY-800F1 1GB

Razões a considerar
Micron Technology 18HTF12872AY-800F1 1GB

Relatar um erro

Velocidade de leitura mais rápida, GB/s

4 16

Valor médio nos testes

INTENSO M418039 8GB

Razões a considerar
INTENSO M418039 8GB

Relatar um erro

Abaixo da latência nos testes do PassMark, ns

20 58

Por volta de -190% menor latência
Velocidade de escrita mais rápida, GB/s

7.4 2,107.0

Valor médio nos testes
Maior largura de banda de memória, mbps

17000 6400

Por volta de 2.66 maior largura de banda

Especificações

Lista completa de especificações técnicas

Micron Technology 18HTF12872AY-800F1 1GB

INTENSO M418039 8GB

Características principais

Tipo de memória

DDR2 DDR4
Latência em PassMark, ns

58 20
Velocidade de leitura, GB/s

4,025.3 16.0
Velocidade de escrita, GB/s

2,107.0 7.4
Largura de banda de memória, mbps

6400 17000

Other

Descrição

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
Tempos / Velocidade do relógio

5-5-5-15 / 800 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (Quanto mais, melhor)

670 2414

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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