RAM
DDR5
DDR4
DDR3
DDR2
Sobre o site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
Sobre o site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Seleccionar RAM 1
Seleccionar RAM 2
Comparar
DDR2 Lista RAM
Todos os módulos de memória, ordenados por latência crescente
№
Largura de banda
Latência, ns
Velocidade de leitura, GB/s
Velocidade de escrita, GB/s
№
181
RAM
SK Hynix HYMP112U72CP8-S6 1GB
Latency
46
Read speed
5,577.2
Write speed
2,404.8
№
182
RAM
DATARAM 2GB
Latency
46
Read speed
5,124.7
Write speed
2,114.3
№
183
RAM
Transcend Information TX1066QLU-4GK 2GB
Latency
46
Read speed
5,805.9
Write speed
2,706.3
№
184
RAM
Kreton Corporation 515233220581351400 1GB
Latency
46
Read speed
5,245.9
Write speed
2,021.5
№
185
RAM
OCZ OCZ2V8002G 2GB
Latency
46
Read speed
4,789.6
Write speed
1,823.3
№
186
RAM
Kreton Corporation 516245525681452500 2GB
Latency
46
Read speed
5,637.0
Write speed
2,332.9
№
187
RAM
Samsung M3 78T2863CZS-CE6 1GB
Latency
46
Read speed
4,335.0
Write speed
1,793.7
№
188
RAM
SK Hynix HYMP512U64CP8-S6 1GB
Latency
46
Read speed
5,172.8
Write speed
2,089.4
№
189
RAM
A Force Manufacturing Ltd. 128X64M-80F 1GB
Latency
46
Read speed
5,168.8
Write speed
2,232.9
№
190
RAM
Samsung M3 78T3354BZ0-CCC 256MB
Latency
46
Read speed
2,909.8
Write speed
1,519.2
№
191
RAM
Catalyst 01GN66KFUA8 1GB
Latency
46
Read speed
3,688.8
Write speed
1,889.6
№
192
RAM
Patriot Memory (PDP Systems) PEP21G6400EL 1GB
Latency
46
Read speed
5,106.4
Write speed
1,681.4
№
193
RAM
Hynix Semiconductor (Hyundai Electronics) HYMP564U72BP8-C4 512MB
Latency
46
Read speed
4,508.5
Write speed
2,036.3
№
194
RAM
Patriot Memory (PDP Systems) PSD21G53381 1GB
Latency
46
Read speed
4,433.3
Write speed
1,974.7
№
195
RAM
Corsair CGM2X1G800 1GB
Latency
46
Read speed
5,249.4
Write speed
2,106.2
№
196
RAM
Samsung M3 78T6553BZ0-CD5 512MB
Latency
47
Read speed
3,367.9
Write speed
1,792.2
№
197
RAM
Micron Technology 8HTF12864AY-667J3C 1GB
Latency
47
Read speed
3,787.0
Write speed
1,773.4
№
198
RAM
Samsung M3 78T6553BZ3-CCC 512MB
Latency
47
Read speed
3,705.4
Write speed
1,641.5
№
199
RAM
Corsair CM2X512-6400C4 512MB
Latency
47
Read speed
5,158.1
Write speed
2,067.9
№
200
RAM
Samsung M3 78T6553CZ0-CD5 512MB
Latency
47
Read speed
3,399.3
Write speed
1,741.4
«
7
8
9
10
11
12
»
Últimas comparações
Patriot Memory (PDP Systems) PSD34G16002 4GB
G Skill Intl F4-4133C19-8GTZSWF 8GB
Kingston ACR16D3LS1NGG/4G 4GB
AMD R538G1601S2LS 8GB
Nanya Technology M2F8G64CB8HC9N-DI 8GB
Corsair CM4X4GF2400C16N2 4GB
PNY Electronics PNY 2GB
GIGA - BYTE Technology Co Ltd GR26C16S8K2HU416 8GB
SK Hynix HYMP512U64CP8-Y5 1GB
Transcend Information JM3200HLB-16GK 8GB
Kreton Corporation 51624xxxx68x35xxxx 2GB
Crucial Technology BLS4G4D240FSB.8FBD2 4GB
A-DATA Technology DDR3 1600 4GB
A-DATA Technology AM1P24HC4R1-BUNS 4GB
Kingston 9965525-018.A00LF 4GB
Shenzhen Xingmem Technology Corp 8ATF51264AZ-2G1A1 4GB
SK Hynix HMT425S6CFR6A-PB 2GB
Apacer Technology 78.C1GMS.C7Z0C 8GB
A-DATA Technology DDR2 800G 2GB
Gloway International (HK) STK4U2400D17082C 8GB
Patriot Memory (PDP Systems) 2400 C17 8GB
G Skill Intl F4-2133C15-16GFT 16GB
SK Hynix HMT325S6CFR8C-H9 2GB
Micron Technology TEAMGROUP-UD4-2400 16GB
Samsung M471A5244CB0-CWE 4GB
Corsair CMW32GX4M2Z3600C18 16GB
Kingston 99U5469-045.A00LF 4GB
SK Hynix HMAA2GS6CJR8N-XN 16GB
Relatar um erro
×
Bug description
Source link