A-DATA Technology AD73I1C1674EV 4GB vs Corsair CMR16GX4M2C3000C16 8GB

总分

A-DATA Technology AD73I1C1674EV 4GB

A-DATA Technology AD73I1C1674EV 4GB

总分

Corsair CMR16GX4M2C3000C16 8GB

Corsair CMR16GX4M2C3000C16 8GB

差异规格评论

差异

A-DATA Technology AD73I1C1674EV 4GB

需要考虑的原因
A-DATA Technology AD73I1C1674EV 4GB

报告一个错误

Corsair CMR16GX4M2C3000C16 8GB

需要考虑的原因
Corsair CMR16GX4M2C3000C16 8GB

报告一个错误

低于PassMark测试中的延时，ns

29 40

左右 -38% 更低的延时
更快的读取速度，GB/s

18 11.3

测试中的平均数值
更快的写入速度，GB/s

13.9 7.5

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

A-DATA Technology AD73I1C1674EV 4GB

Corsair CMR16GX4M2C3000C16 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

40 29
读取速度，GB/s

11.3 18.0
写入速度，GB/s

7.5 13.9
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1654 3371

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Samsung M471A5244CB0-CWE 4GB

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G Skill Intl F4-4000C14-8GTZR 8GB

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Nanya Technology NT4GC64B8HG0NS-CG 4GB

Crucial Technology CT16G4SFS832A.M8FB 16GB

Crucial Technology CT16G4SFS832A.M8FB 16GB

A-DATA Technology AM2L16BC4R1-B0AS 4GB

A-DATA Technology AM2L16BC4R1-B0AS 4GB

Apacer Technology 78.BAGP4.AR50C 4GB

Apacer Technology 78.BAGP4.AR50C 4GB

PNY Electronics PNY 2GB

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Transcend Information TS2GLH64V6B 16GB

Transcend Information TS2GLH64V6B 16GB