A-DATA Technology AD73I1C1674EV 4GB vs Corsair CMWX8GD3200C16W4 8GB

总分

A-DATA Technology AD73I1C1674EV 4GB

A-DATA Technology AD73I1C1674EV 4GB

总分

Corsair CMWX8GD3200C16W4 8GB

Corsair CMWX8GD3200C16W4 8GB

差异规格评论

差异

A-DATA Technology AD73I1C1674EV 4GB

需要考虑的原因
A-DATA Technology AD73I1C1674EV 4GB

报告一个错误

Corsair CMWX8GD3200C16W4 8GB

需要考虑的原因
Corsair CMWX8GD3200C16W4 8GB

报告一个错误

低于PassMark测试中的延时，ns

28 40

左右 -43% 更低的延时
更快的读取速度，GB/s

17.9 11.3

测试中的平均数值
更快的写入速度，GB/s

14.8 7.5

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

A-DATA Technology AD73I1C1674EV 4GB

Corsair CMWX8GD3200C16W4 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

40 28
读取速度，GB/s

11.3 17.9
写入速度，GB/s

7.5 14.8
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1654 3502

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Apacer Technology 78.BAGM6.40C0B 4GB

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A-DATA Technology AD73I1C1674EV 4GB

A-DATA Technology AD73I1C1674EV 4GB

Corsair CMWX8GD3200C16W4 8GB

Corsair CMWX8GD3200C16W4 8GB

Micron Technology 8ATF2G64HZ-3G2E2 16GB

Micron Technology 8ATF2G64HZ-3G2E2 16GB

Crucial Technology BLS16G4D240FSC.16FBR 16GB

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Crucial Technology RM51264BA1339.16FR 4GB

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Kingston 9965589-008.D02G 8GB

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Kingston 99U5474-010.A00LF 2GB

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Team Group Inc. 16GB

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Samsung 1600 CL10 Series 8GB

Kingmax Semiconductor GLLG42F-D8KFGA------ 8GB

Kingmax Semiconductor GLLG42F-D8KFGA------ 8GB

PNY Electronics PNY 2GB

PNY Electronics PNY 2GB

Wilk Elektronik S.A. GR3200S464L22S/8G 8GB

Wilk Elektronik S.A. GR3200S464L22S/8G 8GB

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Samsung M4 70T2953EZ3-CE6 1GB

G Skill Intl F4-2400C15-4GRB 4GB

G Skill Intl F4-2400C15-4GRB 4GB