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A-DATA Technology ADOVE1A0834E 1GB
G Skill Intl F4-4000C19-16GTZKK 16GB

A-DATA Technology ADOVE1A0834E 1GB vs G Skill Intl F4-4000C19-16GTZKK 16GB

总分
star star star star star
A-DATA Technology ADOVE1A0834E 1GB

A-DATA Technology ADOVE1A0834E 1GB

总分
star star star star star
G Skill Intl F4-4000C19-16GTZKK 16GB

G Skill Intl F4-4000C19-16GTZKK 16GB

差异 规格 评论

差异

A-DATA Technology ADOVE1A0834E 1GB 需要考虑的原因
A-DATA Technology ADOVE1A0834E 1GB
报告一个错误
G Skill Intl F4-4000C19-16GTZKK 16GB 需要考虑的原因
G Skill Intl F4-4000C19-16GTZKK 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    23 left arrow 94
    左右 -309% 更低的延时
  • 更快的读取速度，GB/s
    19.8 left arrow 1
    测试中的平均数值
  • 更快的写入速度，GB/s
    18.2 left arrow 1,165.4
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 6400
    左右 2.66 更高的带宽

规格

完整的技术规格清单
A-DATA Technology ADOVE1A0834E 1GB
G Skill Intl F4-4000C19-16GTZKK 16GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    94 left arrow 23
  • 读取速度，GB/s
    1,882.0 left arrow 19.8
  • 写入速度，GB/s
    1,165.4 left arrow 18.2
  • 内存带宽，mbps
    6400 left arrow 17000
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    305 left arrow 4128

A-DATA Technology ADOVE1A0834E 1GB RAM的比较

Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB
G Skill Intl F4-3300C16-8GTZSW 8GB

G Skill Intl F4-4000C19-16GTZKK 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hexon Technology Pte Ltd HEXON 1GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

A-DATA Technology ADOVE1A0834E 1GB
A-DATA Technology ADOVE1A0834E 1GB
G Skill Intl F4-4000C19-16GTZKK 16GB
G Skill Intl F4-4000C19-16GTZKK 16GB
内存RAM
SK Hynix HMT42GR7AFR4A-PB 16GB
SK Hynix HMT42GR7AFR4A-PB 16GB
Kingston LV32D4S2S8HD-8 8GB
Kingston LV32D4S2S8HD-8 8GB
内存RAM
Kingston KVR533D2N4 512MB
Kingston KVR533D2N4 512MB
G Skill Intl F4-2400C17-4GIS 4GB
G Skill Intl F4-2400C17-4GIS 4GB
内存RAM
A-DATA Technology AD73I1C1674EV 4GB
A-DATA Technology AD73I1C1674EV 4GB
G Skill Intl F4-3200C14-16GTZ 16GB
G Skill Intl F4-3200C14-16GTZ 16GB
内存RAM
Samsung M393B1K70CH0-CH9 8GB
Samsung M393B1K70CH0-CH9 8GB
Gloway International Co. Ltd. TYA4U2666D19161C 16GB
Gloway International Co. Ltd. TYA4U2666D19161C 16GB
内存RAM
Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
Samsung M471A2K43EB1-CWE 16GB
Samsung M471A2K43EB1-CWE 16GB
内存RAM
Corsair CMY8GX3M2A2666C10 4GB
Corsair CMY8GX3M2A2666C10 4GB
Crucial Technology CT8G4SFRA266.M8FRS 8GB
Crucial Technology CT8G4SFRA266.M8FRS 8GB
内存RAM
AMD R538G1601U2S-UO 8GB
AMD R538G1601U2S-UO 8GB
G Skill Intl F4-2666C19-16GRS 16GB
G Skill Intl F4-2666C19-16GRS 16GB
内存RAM
Kingston 9965525-140.A00LF 8GB
Kingston 9965525-140.A00LF 8GB
G Skill Intl F4-5333C22-8GTRG 8GB
G Skill Intl F4-5333C22-8GTRG 8GB
内存RAM
A-DATA Technology DOVF1B163G2G 2GB
A-DATA Technology DOVF1B163G2G 2GB
G Skill Intl F4-3000C15-16GTZ 16GB
G Skill Intl F4-3000C15-16GTZ 16GB
内存RAM
Kingston 9905584-016.A00LF 4GB
Kingston 9905584-016.A00LF 4GB
InnoDisk Corporation M4S0-8GSSOCIK 8GB
InnoDisk Corporation M4S0-8GSSOCIK 8GB
内存RAM
Nanya Technology M2F8G64CB8HC9N-DI 8GB
Nanya Technology M2F8G64CB8HC9N-DI 8GB
Corsair CMW128GX4M8C3200C16 16GB
Corsair CMW128GX4M8C3200C16 16GB
内存RAM
Samsung M4 70T5663RZ3-CF7 2GB
Samsung M4 70T5663RZ3-CF7 2GB
Apacer Technology 78.CAGNT.AR40B 8GB
Apacer Technology 78.CAGNT.AR40B 8GB
内存RAM
Team Group Inc. TEAMGROUP-UD4-3200 8GB
Team Group Inc. TEAMGROUP-UD4-3200 8GB
Crucial Technology 8G4US2400.M8B1 8GB
Crucial Technology 8G4US2400.M8B1 8GB
内存RAM