A-DATA Technology ADOVE1A0834E 1GB

Hynix Semiconductor (Hyundai Electronics) HMA41GR7AFR4N-UH 8GB

A-DATA Technology ADOVE1A0834E 1GB vs Hynix Semiconductor (Hyundai Electronics) HMA41GR7AFR4N-UH 8GB

总分

A-DATA Technology ADOVE1A0834E 1GB

A-DATA Technology ADOVE1A0834E 1GB

总分

Hynix Semiconductor (Hyundai Electronics) HMA41GR7AFR4N-UH 8GB

Hynix Semiconductor (Hyundai Electronics) HMA41GR7AFR4N-UH 8GB

差异规格评论

差异

A-DATA Technology ADOVE1A0834E 1GB

需要考虑的原因
A-DATA Technology ADOVE1A0834E 1GB

报告一个错误

Hynix Semiconductor (Hyundai Electronics) HMA41GR7AFR4N-UH 8GB

需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMA41GR7AFR4N-UH 8GB

报告一个错误

低于PassMark测试中的延时，ns

32 94

左右 -194% 更低的延时
更快的读取速度，GB/s

11.3 1

测试中的平均数值
更快的写入速度，GB/s

7.6 1,165.4

测试中的平均数值
更高的内存带宽，mbps

19200 6400

左右 3 更高的带宽

规格

完整的技术规格清单

A-DATA Technology ADOVE1A0834E 1GB

Hynix Semiconductor (Hyundai Electronics) HMA41GR7AFR4N-UH 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

94 32
读取速度，GB/s

1,882.0 11.3
写入速度，GB/s

1,165.4 7.6
内存带宽，mbps

6400 19200

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

5-5-5-15 / 800 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

305 2292

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

A-DATA Technology ADOVE1A0834E 1GB

A-DATA Technology ADOVE1A0834E 1GB

Hynix Semiconductor (Hyundai Electronics) HMA41GR7AFR4N-UH 8GB

Hynix Semiconductor (Hyundai Electronics) HMA41GR7AFR4N

Samsung M378B5273CH0-CH9 4GB

Samsung M378B5273CH0-CH9 4GB

SK Hynix HMA82GR7AFR8N-VK 16GB

SK Hynix HMA82GR7AFR8N-VK 16GB

AMD AE34G1601U1 4GB

AMD AE34G1601U1 4GB

G Skill Intl F4-3600C18-32GTZR 32GB

G Skill Intl F4-3600C18-32GTZR 32GB

Kingston 99U5471-012.A00LF 4GB

Kingston 99U5471-012.A00LF 4GB

Micron Technology 9905625-004.A03LF 8GB

Micron Technology 9905625-004.A03LF 8GB

Samsung M3 78T5663RZ3-CF7 2GB

Samsung M3 78T5663RZ3-CF7 2GB

Kingmax Semiconductor GLAF62F-D8---------- 4GB

Kingmax Semiconductor GLAF62F-D8---------- 4GB

Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB

Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB

Crucial Technology CT8G4SFS824A.C8FE 8GB

Crucial Technology CT8G4SFS824A.C8FE 8GB

SK Hynix HMT325S6BFR8C-H9 2GB

SK Hynix HMT325S6BFR8C-H9 2GB

Kingston KHX2400C15D4/16GX 16GB

Kingston KHX2400C15D4/16GX 16GB

Kreton Corporation 51624xxxx68x35xxxx 2GB

Kreton Corporation 51624xxxx68x35xxxx 2GB

Hewlett-Packard 7EH64AA#ABC 8GB

Hewlett-Packard 7EH64AA#ABC 8GB

G Skill Intl F3-14900CL8-4GBXM 4GB

G Skill Intl F3-14900CL8-4GBXM 4GB

Gloway International (HK) STK4U2400D17082C 8GB

Gloway International (HK) STK4U2400D17082C 8GB

Samsung M3 78T3354BZ0-CCC 256MB

Samsung M3 78T3354BZ0-CCC 256MB

Crucial Technology CT16G4S24AM.M16FE 16GB

Crucial Technology CT16G4S24AM.M16FE 16GB

Kingston KHX2133C11D3/4GX 4GB

Kingston KHX2133C11D3/4GX 4GB

G Skill Intl F4-3200C16-8GTZ 8GB

G Skill Intl F4-3200C16-8GTZ 8GB

G Skill Intl F3-17000CL11-4GBSR 4GB

G Skill Intl F3-17000CL11-4GBSR 4GB

G Skill Intl F4-3600C19-16GVRB 16GB

G Skill Intl F4-3600C19-16GVRB 16GB

Samsung M3 78T3354BZ0-CCC 256MB

Samsung M3 78T3354BZ0-CCC 256MB

Asgard VMA41UF-MEC1U2BQ2 4GB

Asgard VMA41UF-MEC1U2BQ2 4GB

Kingston KHX2800C14D4/8GX 8GB

Kingston KHX2800C14D4/8GX 8GB

Kingston KF3200C20S4/8G 8GB

Kingston KF3200C20S4/8G 8GB