A-DATA Technology ADOVE1A0834E 1GB vs Lexar Co Limited LD4BU008G-H3200ULH 8GB

总分

A-DATA Technology ADOVE1A0834E 1GB

A-DATA Technology ADOVE1A0834E 1GB

总分

Lexar Co Limited LD4BU008G-H3200ULH 8GB

Lexar Co Limited LD4BU008G-H3200ULH 8GB

差异规格评论

差异

A-DATA Technology ADOVE1A0834E 1GB

需要考虑的原因
A-DATA Technology ADOVE1A0834E 1GB

报告一个错误

Lexar Co Limited LD4BU008G-H3200ULH 8GB

需要考虑的原因
Lexar Co Limited LD4BU008G-H3200ULH 8GB

报告一个错误

低于PassMark测试中的延时，ns

32 94

左右 -194% 更低的延时
更快的读取速度，GB/s

20.6 1

测试中的平均数值
更快的写入速度，GB/s

14.7 1,165.4

测试中的平均数值
更高的内存带宽，mbps

25600 6400

左右 4 更高的带宽

规格

完整的技术规格清单

A-DATA Technology ADOVE1A0834E 1GB

Lexar Co Limited LD4BU008G-H3200ULH 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

94 32
读取速度，GB/s

1,882.0 20.6
写入速度，GB/s

1,165.4 14.7
内存带宽，mbps

6400 25600

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
时序/时钟速度

5-5-5-15 / 800 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

305 3393

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Samsung M3 78T5663RZ3-CE6 2GB

Samsung M3 78T5663RZ3-CE6 2GB

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Crucial Technology CT8G4SFD824A.C16FBD2 8GB

Unifosa Corporation GU332G0ALEPR8H2C6F 2GB

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Nanya Technology M471A5143EB1-CRC 4GB

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Crucial Technology BLE4G3D1608DE1TX0. 4GB

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G Skill Intl F4-2400C17-16GSXF 16GB

A-DATA Technology AM2U16BC4P2-B05B 4GB

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Panram International Corporation D4N2400PS-8G 8GB

Panram International Corporation D4N2400PS-8G 8GB