A-DATA Technology DDR2 800G 2GB vs Crucial Technology CT16G4DFD8213.C16FDD 16GB

总分

A-DATA Technology DDR2 800G 2GB

A-DATA Technology DDR2 800G 2GB

总分

Crucial Technology CT16G4DFD8213.C16FDD 16GB

Crucial Technology CT16G4DFD8213.C16FDD 16GB

差异规格评论

差异

A-DATA Technology DDR2 800G 2GB

需要考虑的原因
A-DATA Technology DDR2 800G 2GB

报告一个错误

更快的读取速度，GB/s

5 14.7

测试中的平均数值

Crucial Technology CT16G4DFD8213.C16FDD 16GB

需要考虑的原因
Crucial Technology CT16G4DFD8213.C16FDD 16GB

报告一个错误

低于PassMark测试中的延时，ns

34 49

左右 -44% 更低的延时
更快的写入速度，GB/s

9.2 2,343.1

测试中的平均数值
更高的内存带宽，mbps

17000 6400

左右 2.66 更高的带宽

规格

完整的技术规格清单

A-DATA Technology DDR2 800G 2GB

Crucial Technology CT16G4DFD8213.C16FDD 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

49 34
读取速度，GB/s

5,135.8 14.7
写入速度，GB/s

2,343.1 9.2
内存带宽，mbps

6400 17000

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 17 18 19
时序/时钟速度

5-5-5-15 / 800 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

843 2597

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Essencore Limited KD48GU88C-26N1600 8GB

Essencore Limited KD48GU88C-26N1600 8GB

G Skill Intl F4-2666C19-8GVK 8GB

G Skill Intl F4-2666C19-8GVK 8GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

G Skill Intl F4-3200C14-16GTZN 16GB

G Skill Intl F4-3200C14-16GTZN 16GB

Samsung M393B1G70BH0-CK0 8GB

Samsung M393B1G70BH0-CK0 8GB

Smart Modular SF464128CK8I6GKSEG 4GB

Smart Modular SF464128CK8I6GKSEG 4GB

A-DATA Technology DDR3 1333G 2GB

A-DATA Technology DDR3 1333G 2GB

Asgard VMA44UI-MEC1U2AW2 32GB

Asgard VMA44UI-MEC1U2AW2 32GB

Samsung M393B1K70CH0-YH9 8GB

Samsung M393B1K70CH0-YH9 8GB

Avexir Technologies Corporation DDR4-2800 CL15 8GB 8GB

Avexir Technologies Corporation DDR4-2800 CL15 8GB 8GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Crucial Technology CT8G4SFS8266.C8FJ 8GB

Crucial Technology CT8G4SFS8266.C8FJ 8GB

Samsung M393B2G70BH0-YK0 16GB

Samsung M393B2G70BH0-YK0 16GB

Corsair CMD32GX4M2B2800C14 16GB

Corsair CMD32GX4M2B2800C14 16GB

Crucial Technology CT102464BF160B.16F 8GB

Crucial Technology CT102464BF160B.16F 8GB

G Skill Intl F4-3600C16-8GTZR 8GB

G Skill Intl F4-3600C16-8GTZR 8GB

Patriot Memory (PDP Systems) PSD38G1600L2S 8GB

Patriot Memory (PDP Systems) PSD38G1600L2S 8GB

Mushkin MR[A/B]4U280HHHH8G 8GB

Mushkin MR[A/B]4U280HHHH8G 8GB

Samsung M378B5773DH0-CH9 2GB

Samsung M378B5773DH0-CH9 2GB

G Skill Intl F4-2400C15-16GTZR 16GB

G Skill Intl F4-2400C15-16GTZR 16GB

Apacer Technology 78.01G86.9H50C 1GB

Apacer Technology 78.01G86.9H50C 1GB

SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB

SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB

Samsung M393B1K70CH0-CH9 8GB

Samsung M393B1K70CH0-CH9 8GB

ISD Technology Limited 8GBF1X08QFHH38-135-K 8GB

ISD Technology Limited 8GBF1X08QFHH38-135-K 8GB

Kingston MSI16D3LS1MNG/8G 8GB

Kingston MSI16D3LS1MNG/8G 8GB

Hoodisk Electronics Co Ltd MD401GNSE-CB3M2 8GB

Hoodisk Electronics Co Ltd MD401GNSE-CB3M2 8GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

Mushkin MR[A/B]4U266GHHF16G 16GB

Mushkin MR[A/B]4U266GHHF16G 16GB