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A-DATA Technology DDR4 2400 16GB
G Skill Intl F4-3400C16-16GVK 16GB

A-DATA Technology DDR4 2400 16GB vs G Skill Intl F4-3400C16-16GVK 16GB

总分
star star star star star
A-DATA Technology DDR4 2400 16GB

A-DATA Technology DDR4 2400 16GB

总分
star star star star star
G Skill Intl F4-3400C16-16GVK 16GB

G Skill Intl F4-3400C16-16GVK 16GB

差异 规格 评论

差异

A-DATA Technology DDR4 2400 16GB 需要考虑的原因
A-DATA Technology DDR4 2400 16GB
报告一个错误
G Skill Intl F4-3400C16-16GVK 16GB 需要考虑的原因
G Skill Intl F4-3400C16-16GVK 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    26 left arrow 30
    左右 -15% 更低的延时
  • 更快的读取速度，GB/s
    18.7 left arrow 16.8
    测试中的平均数值
  • 更快的写入速度，GB/s
    15.0 left arrow 11.5
    测试中的平均数值

规格

完整的技术规格清单
A-DATA Technology DDR4 2400 16GB
G Skill Intl F4-3400C16-16GVK 16GB
主要特点
  • 存储器类型
    DDR4 left arrow DDR4
  • PassMark中的延时，ns
    30 left arrow 26
  • 读取速度，GB/s
    16.8 left arrow 18.7
  • 写入速度，GB/s
    11.5 left arrow 15.0
  • 内存带宽，mbps
    17000 left arrow 17000
Other
  • 描述
    PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • 时序/时钟速度
    14-14-14, 15-15-15, 16-16-16 / 2133 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    3019 left arrow 3834

A-DATA Technology DDR4 2400 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Samsung M378B5673EH1-CF8 2GB

G Skill Intl F4-3400C16-16GVK 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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RAM 2

最新比较

A-DATA Technology DDR4 2666 8GB
A-DATA Technology DDR4 2666 8GB
Kingston KF3200C16D4/16GX 16GB
Kingston KF3200C16D4/16GX 16GB
内存RAM
Samsung M378B5673EH1-CF8 2GB
Samsung M378B5673EH1-CF8 2GB
G Skill Intl F4-3200C14-32GTZR 32GB
G Skill Intl F4-3200C14-32GTZR 32GB
内存RAM
A-DATA Technology ADOVE1A0834E 1GB
A-DATA Technology ADOVE1A0834E 1GB
Avexir Technologies Corporation DDR4-2666 CL15 4GB 4GB
Avexir Technologies Corporation DDR4-2666 CL15 4GB 4GB
内存RAM
A-DATA Technology AD73I1B1672EG 2GB
A-DATA Technology AD73I1B1672EG 2GB
A-DATA Technology DDR4 3300 2OZ 4GB
A-DATA Technology DDR4 3300 2OZ 4GB
内存RAM
A-DATA Technology DDR3 1333G 2GB
A-DATA Technology DDR3 1333G 2GB
G Skill Intl F4-3200C15-16GTZKY 16GB
G Skill Intl F4-3200C15-16GTZKY 16GB
内存RAM
A-DATA Technology DDR3 1600 4GB
A-DATA Technology DDR3 1600 4GB
Asgard VMA44UI-MEC1U2AW2 32GB
Asgard VMA44UI-MEC1U2AW2 32GB
内存RAM
Wilk Elektronik S.A. IRH3200D464L16S/8G 8GB
Wilk Elektronik S.A. IRH3200D464L16S/8G 8GB
Kingston 16ATF2G64AZ-2G1B1 8GB
Kingston 16ATF2G64AZ-2G1B1 8GB
内存RAM
Corsair CMX4GX3M2A1600C9 2GB
Corsair CMX4GX3M2A1600C9 2GB
G Skill Intl F4-2666C18-32GRS 32GB
G Skill Intl F4-2666C18-32GRS 32GB
内存RAM
Kingston 9965525-140.A00LF 8GB
Kingston 9965525-140.A00LF 8GB
Micron Technology 16ATF4G64HZ-3G2E1 32GB
Micron Technology 16ATF4G64HZ-3G2E1 32GB
内存RAM
Samsung M378B5673EH1-CF8 2GB
Samsung M378B5673EH1-CF8 2GB
Kingston HP28D4S7D8HA-16X 16GB
Kingston HP28D4S7D8HA-16X 16GB
内存RAM
Samsung M393B2G70BH0-CH9 16GB
Samsung M393B2G70BH0-CH9 16GB
Crucial Technology CT8G4DFRA266.C8FP 8GB
Crucial Technology CT8G4DFRA266.C8FP 8GB
内存RAM
SK Hynix HYMP112U64CP8-S5 1GB
SK Hynix HYMP112U64CP8-S5 1GB
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Micron Technology 8ATF2G64HZ-3G2E2 16GB
内存RAM
Corsair CMSX64GX4M2A2666C18 32GB
Corsair CMSX64GX4M2A2666C18 32GB
SK Hynix HMAA4GS6AJR8N-VK 32GB
SK Hynix HMAA4GS6AJR8N-VK 32GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR4N-TF 8GB
Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR4N
Samsung M393B2G70DB0-CK0 16GB
Samsung M393B2G70DB0-CK0 16GB
内存RAM