A-DATA Technology DQVE1908 512MB vs AMD R744G2606U1S 4GB

总分

A-DATA Technology DQVE1908 512MB

A-DATA Technology DQVE1908 512MB

总分

AMD R744G2606U1S 4GB

AMD R744G2606U1S 4GB

差异规格评论

差异

A-DATA Technology DQVE1908 512MB

需要考虑的原因
A-DATA Technology DQVE1908 512MB

报告一个错误

低于PassMark测试中的延时，ns

66 76

左右 13% 更低的延时
更快的读取速度，GB/s

2 15.7

测试中的平均数值

AMD R744G2606U1S 4GB

需要考虑的原因
AMD R744G2606U1S 4GB

报告一个错误

更快的写入速度，GB/s

8.7 1,557.9

测试中的平均数值
更高的内存带宽，mbps

19200 6400

左右 3 更高的带宽

规格

完整的技术规格清单

A-DATA Technology DQVE1908 512MB

AMD R744G2606U1S 4GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

66 76
读取速度，GB/s

2,775.5 15.7
写入速度，GB/s

1,557.9 8.7
内存带宽，mbps

6400 19200

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

5-5-5-15 / 800 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

382 1809

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

A-DATA Technology DQVE1908 512MB

A-DATA Technology DQVE1908 512MB

AMD R744G2606U1S 4GB

AMD R744G2606U1S 4GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Micron Technology 8ATF1G64HZ-2G1A1 8GB

Micron Technology 8ATF1G64HZ-2G1A1 8GB

Samsung M3 78T2863EHS-CF7 1GB

Samsung M3 78T2863EHS-CF7 1GB

Kingston 9905668-001.A00G 8GB

Kingston 9905668-001.A00G 8GB

SK Hynix HYMP112S64CP6-S6 1GB

SK Hynix HYMP112S64CP6-S6 1GB

G Skill Intl F4-4133C17-8GTZR 8GB

G Skill Intl F4-4133C17-8GTZR 8GB

Samsung 1600 CL10 Series 8GB

Samsung 1600 CL10 Series 8GB

Micron Technology 18ASF2G72AZ-2G1A1 16GB

Micron Technology 18ASF2G72AZ-2G1A1 16GB

Nanya Technology NT1GT64U88D0BY-AD 1GB

Nanya Technology NT1GT64U88D0BY-AD 1GB

Crucial Technology CT16G4SFD824A.C16FJ 16GB

Crucial Technology CT16G4SFD824A.C16FJ 16GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

Corsair CMD32GX4M4C3200C16-R 8GB

Corsair CMD32GX4M4C3200C16-R 8GB

Nanya Technology NT2GT64U8HD0BN-AD 2GB

Nanya Technology NT2GT64U8HD0BN-AD 2GB

Lexar Co Limited LD4BU008G-H3200ULH 8GB

Lexar Co Limited LD4BU008G-H3200ULH 8GB

SK Hynix HMT325S6BFR8C-H9 2GB

SK Hynix HMT325S6BFR8C-H9 2GB

G Skill Intl F4-3800C14-8GTZN 8GB

G Skill Intl F4-3800C14-8GTZN 8GB

Samsung M4 70T5663RZ3-CF7 2GB

Samsung M4 70T5663RZ3-CF7 2GB

Samsung M4 70T5663QZ3-CF7 2GB

Samsung M4 70T5663QZ3-CF7 2GB

Nanya Technology NT512T64U88B0BY-3C 512MB

Nanya Technology NT512T64U88B0BY-3C 512MB

Corsair CMK64GX4M4C3200C16 16GB

Corsair CMK64GX4M4C3200C16 16GB

Corsair CMX8GX3M2A2000C9 4GB

Corsair CMX8GX3M2A2000C9 4GB

Samsung M393A8K40B21-CTC 64GB

Samsung M393A8K40B21-CTC 64GB

Samsung 1600 CL10 Series 8GB

Samsung 1600 CL10 Series 8GB

Kingston 9965589-006.E00G 8GB

Kingston 9965589-006.E00G 8GB

AMD R5S38G1601U2S 8GB

AMD R5S38G1601U2S 8GB

Teclast TLD416G26A30 16GB

Teclast TLD416G26A30 16GB