A-DATA Technology DQVE1908 512MB vs G Skill Intl F4-3866C18-4GVK 4GB

总分

A-DATA Technology DQVE1908 512MB

A-DATA Technology DQVE1908 512MB

总分

G Skill Intl F4-3866C18-4GVK 4GB

G Skill Intl F4-3866C18-4GVK 4GB

差异规格评论

差异

A-DATA Technology DQVE1908 512MB

需要考虑的原因
A-DATA Technology DQVE1908 512MB

报告一个错误

更快的读取速度，GB/s

2 19.2

测试中的平均数值

G Skill Intl F4-3866C18-4GVK 4GB

需要考虑的原因
G Skill Intl F4-3866C18-4GVK 4GB

报告一个错误

低于PassMark测试中的延时，ns

19 66

左右 -247% 更低的延时
更快的写入速度，GB/s

13.5 1,557.9

测试中的平均数值
更高的内存带宽，mbps

17000 6400

左右 2.66 更高的带宽

规格

完整的技术规格清单

A-DATA Technology DQVE1908 512MB

G Skill Intl F4-3866C18-4GVK 4GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

66 19
读取速度，GB/s

2,775.5 19.2
写入速度，GB/s

1,557.9 13.5
内存带宽，mbps

6400 17000

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度

5-5-5-15 / 800 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

382 3075

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Samsung M395T2863QZ4-CF76 1GB

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INTENSO 5641160 8GB

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Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB

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Kingmax Semiconductor GLAF62F-D8---------- 4GB

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takeMS International AG TMS2GB264D082-805G 2GB

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Kingston 8ATF1G64AZ-2G1B1 8GB

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G Skill Intl F4-3200C16-8GVKB 8GB

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Kingston KHX426C13/8G 8GB

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

Crucial Technology BLS4G4D26BFSC.8FBR2 4GB

Crucial Technology BLS4G4D26BFSC.8FBR2 4GB

A-DATA Technology DQKD1A08 1GB

A-DATA Technology DQKD1A08 1GB

Kingston KHX2133C14D4/8G 8GB

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A-DATA Technology DQKD1A08 1GB

Corsair CMD32GX4M4B3466C16 8GB

Corsair CMD32GX4M4B3466C16 8GB

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A-DATA Technology ADOVE1A0834E 1GB

G Skill Intl F4-4000C16-16GTZRA 16GB

G Skill Intl F4-4000C16-16GTZRA 16GB