A-DATA Technology DQVE1908 512MB vs G Skill Intl F4-4266C19-8GTZSW 8GB

总分

A-DATA Technology DQVE1908 512MB

A-DATA Technology DQVE1908 512MB

总分

G Skill Intl F4-4266C19-8GTZSW 8GB

G Skill Intl F4-4266C19-8GTZSW 8GB

差异规格评论

差异

A-DATA Technology DQVE1908 512MB

需要考虑的原因
A-DATA Technology DQVE1908 512MB

报告一个错误

G Skill Intl F4-4266C19-8GTZSW 8GB

需要考虑的原因
G Skill Intl F4-4266C19-8GTZSW 8GB

报告一个错误

低于PassMark测试中的延时，ns

17 66

左右 -288% 更低的延时
更快的读取速度，GB/s

22.1 2

测试中的平均数值
更快的写入速度，GB/s

18.0 1,557.9

测试中的平均数值
更高的内存带宽，mbps

17000 6400

左右 2.66 更高的带宽

规格

完整的技术规格清单

A-DATA Technology DQVE1908 512MB

G Skill Intl F4-4266C19-8GTZSW 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

66 17
读取速度，GB/s

2,775.5 22.1
写入速度，GB/s

1,557.9 18.0
内存带宽，mbps

6400 17000

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

5-5-5-15 / 800 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

382 3847

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

A-DATA Technology DQVE1908 512MB

A-DATA Technology DQVE1908 512MB

G Skill Intl F4-4266C19-8GTZSW 8GB

G Skill Intl F4-4266C19-8GTZSW 8GB

A-DATA Technology DOVF1B163G2G 2GB

A-DATA Technology DOVF1B163G2G 2GB

Gold Key Technology Co Ltd NMUD416E82-3200D 16GB

Gold Key Technology Co Ltd NMUD416E82-3200D 16GB

Corsair VS1GB800D2 1GB

Corsair VS1GB800D2 1GB

Hoodisk Electronics Co Ltd GKE800UD102408-2400 8GB

Hoodisk Electronics Co Ltd GKE800UD102408-2400 8GB

Kingston HX318C10FK/4 4GB

Kingston HX318C10FK/4 4GB

A-DATA Technology DDR4 3333 2OZ 4GB

A-DATA Technology DDR4 3333 2OZ 4GB

Samsung 1600 CL10 Series 8GB

Samsung 1600 CL10 Series 8GB

Patriot Memory (PDP Systems) 3733 C17 Series 8GB

Patriot Memory (PDP Systems) 3733 C17 Series 8GB

Mushkin 991679ES 996679ES 2GB

Mushkin 991679ES 996679ES 2GB

Crucial Technology BLM8G40C18U4BL.M8FE1 8GB

Crucial Technology BLM8G40C18U4BL.M8FE1 8GB

Kingston 99U5474-037.A00LF 4GB

Kingston 99U5474-037.A00LF 4GB

Kingmax Semiconductor GSLG42F-18---------- 8GB

Kingmax Semiconductor GSLG42F-18---------- 8GB

Nanya Technology NT4GC64B8HG0NS-CG 4GB

Nanya Technology NT4GC64B8HG0NS-CG 4GB

G Skill Intl F4-2400C15-8GIS 8GB

G Skill Intl F4-2400C15-8GIS 8GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Corsair CMK32GX4M4K4333C19 8GB

Corsair CMK32GX4M4K4333C19 8GB

A-DATA Technology AD73I1C1674EV 4GB

A-DATA Technology AD73I1C1674EV 4GB

Samsung M471A2G43BB2-CWE 16GB

Samsung M471A2G43BB2-CWE 16GB

A-DATA Technology DDR3 1600 4GB

A-DATA Technology DDR3 1600 4GB

G Skill Intl F4-3600C16-8GTZRC 8GB

G Skill Intl F4-3600C16-8GTZRC 8GB

Kingston 9905469-143.A00LF 4GB

Kingston 9905469-143.A00LF 4GB

Crucial Technology BLS8G4D26BFSEK.8FBD 8GB

Crucial Technology BLS8G4D26BFSEK.8FBD 8GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Gold Key Technology Co Ltd GKE800UD102408-2666 8GB

Gold Key Technology Co Ltd GKE800UD102408-2666 8GB

SK Hynix HYMP112U64CP8-S6 1GB

SK Hynix HYMP112U64CP8-S6 1GB

G Skill Intl F4-3600C17-8GTZR 8GB

G Skill Intl F4-3600C17-8GTZR 8GB