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A-DATA Technology DQVE1908 512MB
Gold Key Technology Co Ltd GKE800SO102408-3200 8GB

A-DATA Technology DQVE1908 512MB vs Gold Key Technology Co Ltd GKE800SO102408-3200 8GB

总分
star star star star star
A-DATA Technology DQVE1908 512MB

A-DATA Technology DQVE1908 512MB

总分
star star star star star
Gold Key Technology Co Ltd GKE800SO102408-3200 8GB

Gold Key Technology Co Ltd GKE800SO102408-3200 8GB

差异 规格 评论

差异

A-DATA Technology DQVE1908 512MB 需要考虑的原因
A-DATA Technology DQVE1908 512MB
报告一个错误
  • 更快的读取速度，GB/s
    2 left arrow 16
    测试中的平均数值
Gold Key Technology Co Ltd GKE800SO102408-3200 8GB 需要考虑的原因
Gold Key Technology Co Ltd GKE800SO102408-3200 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    28 left arrow 66
    左右 -136% 更低的延时
  • 更快的写入速度，GB/s
    11.2 left arrow 1,557.9
    测试中的平均数值
  • 更高的内存带宽，mbps
    25600 left arrow 6400
    左右 4 更高的带宽

规格

完整的技术规格清单
A-DATA Technology DQVE1908 512MB
Gold Key Technology Co Ltd GKE800SO102408-3200 8GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    66 left arrow 28
  • 读取速度，GB/s
    2,775.5 left arrow 16.0
  • 写入速度，GB/s
    1,557.9 left arrow 11.2
  • 内存带宽，mbps
    6400 left arrow 25600
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-25600, 1.2V, CAS Supported: 11 12 13 14 15 16 17 18 19 20 21 22
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
  • 排名PassMark (越多越好)
    382 left arrow 2901

A-DATA Technology DQVE1908 512MB RAM的比较

Qimonda ITC 1GB
Micron Technology 36HTS1G72FY667A1D4 8GB

Gold Key Technology Co Ltd GKE800SO102408-3200 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston 9965525-155.A00LF 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

A-DATA Technology DQVE1908 512MB
A-DATA Technology DQVE1908 512MB
Gold Key Technology Co Ltd GKE800SO102408-3200 8GB
Gold Key Technology Co Ltd GKE800SO102408-3200 8GB
内存RAM
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内存RAM
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A-DATA Technology AM2U16BC4P2-B05B 4GB
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Heoriady M378A1K43BB2-CTD 8GB
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AMD AE34G2139U2 4GB
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TwinMOS 8DPT5MK8-TATP 2GB
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G Skill Intl F4-2400C15-8GFXR 8GB
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Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
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Crucial Technology CT51264AC800.C16FC 4GB
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Kingston CBD26D4S9S8ME-8 8GB
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AMD R538G1601U2S 8GB
AMD R538G1601U2S 8GB
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Thermaltake Technology Co Ltd R002D408GX2-2666C19D 8GB
内存RAM
AMD R5S38G1601U2S 8GB
AMD R5S38G1601U2S 8GB
Samsung M378A2K43EB1-CWE 16GB
Samsung M378A2K43EB1-CWE 16GB
内存RAM
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Nanya Technology NT4GC64B8HG0NS-CG 4GB
G Skill Intl F4-3200C15-16GTZR 16GB
G Skill Intl F4-3200C15-16GTZR 16GB
内存RAM
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Hexon Technology Pte Ltd HEXON 1GB
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A-DATA Technology AO2P24HCST2-BTVS 16GB
内存RAM
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Hexon Technology Pte Ltd HEXON 1GB
Apacer Technology D22.2221ZA.001 8GB
Apacer Technology D22.2221ZA.001 8GB
内存RAM
Crucial Technology CT4G4DFS8213.8FA11 4GB
Crucial Technology CT4G4DFS8213.8FA11 4GB
Samsung M378A1G43DB0-CPB 8GB
Samsung M378A1G43DB0-CPB 8GB
内存RAM
Wilk Elektronik S.A. GY1866D364L9A/4G 4GB
Wilk Elektronik S.A. GY1866D364L9A/4G 4GB
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Crucial Technology BLS16G4D240FSE.16FBR 16GB
内存RAM