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A-DATA Technology DQVE1908 512MB
Micron Technology TEAMGROUP-UD4-2133 16GB

A-DATA Technology DQVE1908 512MB vs Micron Technology TEAMGROUP-UD4-2133 16GB

总分
star star star star star
A-DATA Technology DQVE1908 512MB

A-DATA Technology DQVE1908 512MB

总分
star star star star star
Micron Technology TEAMGROUP-UD4-2133 16GB

Micron Technology TEAMGROUP-UD4-2133 16GB

差异 规格 评论

差异

A-DATA Technology DQVE1908 512MB 需要考虑的原因
A-DATA Technology DQVE1908 512MB
报告一个错误
  • 更快的读取速度，GB/s
    2 left arrow 12.6
    测试中的平均数值
Micron Technology TEAMGROUP-UD4-2133 16GB 需要考虑的原因
Micron Technology TEAMGROUP-UD4-2133 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    24 left arrow 66
    左右 -175% 更低的延时
  • 更快的写入速度，GB/s
    5.6 left arrow 1,557.9
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 6400
    左右 2.66 更高的带宽

规格

完整的技术规格清单
A-DATA Technology DQVE1908 512MB
Micron Technology TEAMGROUP-UD4-2133 16GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    66 left arrow 24
  • 读取速度，GB/s
    2,775.5 left arrow 12.6
  • 写入速度，GB/s
    1,557.9 left arrow 5.6
  • 内存带宽，mbps
    6400 left arrow 17000
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    382 left arrow 2130

A-DATA Technology DQVE1908 512MB RAM的比较

Qimonda ITC 1GB
Micron Technology 36HTS1G72FY667A1D4 8GB

Micron Technology TEAMGROUP-UD4-2133 16GB RAM的比较

Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Corsair CM5S16GM4800A40K2 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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G Skill Intl F4-2400C16-16GFX 16GB
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Samsung M378B5173BH0-CH9 4GB
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A-DATA Technology DDR3 1866 2OZ 4GB
A-DATA Technology DDR3 1866 2OZ 4GB
Corsair CMW16GX4M1Z3600C18 16GB
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内存RAM
Samsung M393B1K70CH0-CH9 8GB
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Kingston KHX16 4GB
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A-DATA Technology DDR2 800G 2GB
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Chun Well Technology Holding Limited CL16-20-20 D4-3200
内存RAM
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Crucial Technology CT16G4SFS832A.M8FB 16GB
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内存RAM
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Ramos Technology EWB8GB681CA3-16IC 8GB
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SK Hynix HMT325U6CFR8C-PB 2GB
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G Skill Intl F4-2133C15-4GRR 4GB
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Nanya Technology M2Y1G64TU8HB0B-25C 1GB
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DSL Memory CIR-W4SUSS2408G 8GB
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