A-DATA Technology DQVE1908 512MB vs SK Hynix HMA41GR7MFR4N-TFTD 8GB

总分

A-DATA Technology DQVE1908 512MB

A-DATA Technology DQVE1908 512MB

总分

SK Hynix HMA41GR7MFR4N-TFTD 8GB

SK Hynix HMA41GR7MFR4N-TFTD 8GB

差异规格评论

差异

A-DATA Technology DQVE1908 512MB

需要考虑的原因
A-DATA Technology DQVE1908 512MB

报告一个错误

SK Hynix HMA41GR7MFR4N-TFTD 8GB

需要考虑的原因
SK Hynix HMA41GR7MFR4N-TFTD 8GB

报告一个错误

低于PassMark测试中的延时，ns

36 66

左右 -83% 更低的延时
更快的读取速度，GB/s

9.1 2

测试中的平均数值
更快的写入速度，GB/s

7.5 1,557.9

测试中的平均数值
更高的内存带宽，mbps

17000 6400

左右 2.66 更高的带宽

规格

完整的技术规格清单

A-DATA Technology DQVE1908 512MB

SK Hynix HMA41GR7MFR4N-TFTD 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

66 36
读取速度，GB/s

2,775.5 9.1
写入速度，GB/s

1,557.9 7.5
内存带宽，mbps

6400 17000

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
时序/时钟速度

5-5-5-15 / 800 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

382 1927

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Patriot Memory (PDP Systems) PSD48G21332 8GB

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Corsair CMSX4GX3M1A1600C9 4GB

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G Skill Intl F4-2666C19-16GRS 16GB

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Apacer Technology AQD-D4U8GN24-SE 8GB

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A-DATA Technology AD4S3200316G22-BHYD 16GB

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Samsung M378B5673FH0-CH9 2GB

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Corsair CMD16GX4M2B3733C17 8GB

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Golden Empire 1GB DDR2 800 CAS=4 1GB

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Kingston HP32D4U8S8HC-8XR 8GB

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Wilk Elektronik S.A. GX2426D464S/8GSBS2 8GB

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Crucial Technology BLS16G4S26BFSD.16FD 16GB

Kingston 99U5474-037.A00LF 4GB

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Dust Leopard DDR4-2400 C17 8GB 8GB

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Smart Modular SG564568FG8N6KF-Z2 2GB

Crucial Technology CT8G4SFS8266.C8FE 8GB

Crucial Technology CT8G4SFS8266.C8FE 8GB

Kingston ACR512X64D3S13C9G 4GB

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Corsair CMD32GX4M4B3600C16 8GB

Corsair CMD32GX4M4B3600C16 8GB

Samsung M471B5273DH0-CH9 4GB

Samsung M471B5273DH0-CH9 4GB

Patriot Memory (PDP Systems) 3000 C15 Series 8GB

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Chun Well Technology Holding Limited MD4U0840180BCW 8GB

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