A-DATA Technology DQVE1908 512MB vs SK Hynix HMA851S6AFR6N-UH 4GB

总分

A-DATA Technology DQVE1908 512MB

A-DATA Technology DQVE1908 512MB

总分

SK Hynix HMA851S6AFR6N-UH 4GB

SK Hynix HMA851S6AFR6N-UH 4GB

差异规格评论

差异

A-DATA Technology DQVE1908 512MB

需要考虑的原因
A-DATA Technology DQVE1908 512MB

报告一个错误

更快的读取速度，GB/s

2 13.8

测试中的平均数值

SK Hynix HMA851S6AFR6N-UH 4GB

需要考虑的原因
SK Hynix HMA851S6AFR6N-UH 4GB

报告一个错误

低于PassMark测试中的延时，ns

38 66

左右 -74% 更低的延时
更快的写入速度，GB/s

9.8 1,557.9

测试中的平均数值
更高的内存带宽，mbps

19200 6400

左右 3 更高的带宽

规格

完整的技术规格清单

A-DATA Technology DQVE1908 512MB

SK Hynix HMA851S6AFR6N-UH 4GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

66 38
读取速度，GB/s

2,775.5 13.8
写入速度，GB/s

1,557.9 9.8
内存带宽，mbps

6400 19200

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

5-5-5-15 / 800 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

382 2073

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Lexar Co Limited LD4AU016G-H3200GST 16GB

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Avant Technology F6451U64F9333G 4GB

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G Skill Intl F4-3200C16-16GIS 16GB

G Skill Intl F4-3200C16-16GIS 16GB

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AMD R748G2606U2S 8GB

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Team Group Inc. UD5-6400 16GB

Team Group Inc. UD5-6400 16GB

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A-DATA Technology DQVE1908 512MB

A-DATA Technology DQVE1908 512MB

Crucial Technology BL16G30C15U4B.M16FE1 16GB

Crucial Technology BL16G30C15U4B.M16FE1 16GB

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Gold Key Technology Co Ltd NMUD416E86-3200D 16GB

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Samsung M386B4G70DM0-CMA4 32GB

Samsung M386B4G70DM0-CMA4 32GB

G Skill Intl F4-4000C16-8GTZRA 8GB

G Skill Intl F4-4000C16-8GTZRA 8GB