A-DATA Technology VDQVE1B16 2GB vs Corsair CMN16GX4M2Z3200C16 8GB

总分

A-DATA Technology VDQVE1B16 2GB

A-DATA Technology VDQVE1B16 2GB

总分

Corsair CMN16GX4M2Z3200C16 8GB

Corsair CMN16GX4M2Z3200C16 8GB

差异规格评论

差异

A-DATA Technology VDQVE1B16 2GB

需要考虑的原因
A-DATA Technology VDQVE1B16 2GB

报告一个错误

更快的读取速度，GB/s

4 20.6

测试中的平均数值
更快的写入速度，GB/s

2,061.2 14.7

测试中的平均数值

Corsair CMN16GX4M2Z3200C16 8GB

需要考虑的原因
Corsair CMN16GX4M2Z3200C16 8GB

报告一个错误

低于PassMark测试中的延时，ns

31 46

左右 -48% 更低的延时
更高的内存带宽，mbps

25600 6400

左右 4 更高的带宽

规格

完整的技术规格清单

A-DATA Technology VDQVE1B16 2GB

Corsair CMN16GX4M2Z3200C16 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

46 31
读取速度，GB/s

4,937.3 20.6
写入速度，GB/s

2,061.2 14.7
内存带宽，mbps

6400 25600

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5 PC4-25600, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
时序/时钟速度

5-5-5-15 / 800 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

759 3367

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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PNY Electronics PNY 2GB

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Kingston HP26D4U6D8ME-16X 16GB

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OM Nanotech Pvt.Ltd V2D4SF32GB2G82G83200 32GB

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Apacer Technology 78.01G86.9H50C 1GB

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Crucial Technology BLS8G4D30AESCK.M8FE 8GB