A-DATA Technology VDQVE1B16 2GB vs Crucial Technology CT32G4DFD8266.M16FB 32GB

总分

A-DATA Technology VDQVE1B16 2GB

A-DATA Technology VDQVE1B16 2GB

总分

Crucial Technology CT32G4DFD8266.M16FB 32GB

Crucial Technology CT32G4DFD8266.M16FB 32GB

差异规格评论

差异

A-DATA Technology VDQVE1B16 2GB

需要考虑的原因
A-DATA Technology VDQVE1B16 2GB

报告一个错误

更快的读取速度，GB/s

4 15.3

测试中的平均数值
更快的写入速度，GB/s

2,061.2 12.9

测试中的平均数值

Crucial Technology CT32G4DFD8266.M16FB 32GB

需要考虑的原因
Crucial Technology CT32G4DFD8266.M16FB 32GB

报告一个错误

低于PassMark测试中的延时，ns

33 46

左右 -39% 更低的延时
更高的内存带宽，mbps

21300 6400

左右 3.33 更高的带宽

规格

完整的技术规格清单

A-DATA Technology VDQVE1B16 2GB

Crucial Technology CT32G4DFD8266.M16FB 32GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

46 33
读取速度，GB/s

4,937.3 15.3
写入速度，GB/s

2,061.2 12.9
内存带宽，mbps

6400 21300

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

5-5-5-15 / 800 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

759 3315

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Kingston HP26D4U9D8HC-16X 16GB

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Crucial Technology CT25664AA800.M16FM 2GB

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Neo Forza NMUD416E82-3600 16GB

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A-DATA Technology AD73I1B1672EG 2GB

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Cortus SAS 8ATF1G64AZ-2G6E1 8GB

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SK Hynix HMT451U7BFR8C-RD 4GB

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Smart Modular SMS4TDC8C1K0446FCG 8GB

Smart Modular SMS4TDC8C1K0446FCG 8GB

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Crucial Technology CT102464BF160B-16F 8GB

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G Skill Intl F4-3200C16-8GTZR 8GB

Samsung M391B5673EH1-CH9 2GB

Samsung M391B5673EH1-CH9 2GB

Apacer Technology 78.C1GMM.AUC0B 8GB

Apacer Technology 78.C1GMM.AUC0B 8GB

A-DATA Technology AM2U16BC4P2-B05B 4GB

A-DATA Technology AM2U16BC4P2-B05B 4GB

Corsair CM4X8GC3000C15K4 8GB

Corsair CM4X8GC3000C15K4 8GB

SK Hynix HMT42GR7AFR4C-RD 16GB

SK Hynix HMT42GR7AFR4C-RD 16GB

G Skill Intl F4-3200C15-16GTZKO 16GB

G Skill Intl F4-3200C15-16GTZKO 16GB