RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
A-DATA Technology VDQVE1B16 2GB
Hynix Semiconductor (Hyundai Electronics) HMA82GU6MFR8N-TF 16GB
比较
A-DATA Technology VDQVE1B16 2GB vs Hynix Semiconductor (Hyundai Electronics) HMA82GU6MFR8N-TF 16GB
总分
A-DATA Technology VDQVE1B16 2GB
总分
Hynix Semiconductor (Hyundai Electronics) HMA82GU6MFR8N-TF 16GB
差异
规格
评论
差异
需要考虑的原因
A-DATA Technology VDQVE1B16 2GB
报告一个错误
更快的读取速度,GB/s
4
14.8
测试中的平均数值
需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMA82GU6MFR8N-TF 16GB
报告一个错误
低于PassMark测试中的延时,ns
25
46
左右 -84% 更低的延时
更快的写入速度,GB/s
8.9
2,061.2
测试中的平均数值
更高的内存带宽,mbps
17000
6400
左右 2.66 更高的带宽
规格
完整的技术规格清单
A-DATA Technology VDQVE1B16 2GB
Hynix Semiconductor (Hyundai Electronics) HMA82GU6MFR8N-TF 16GB
主要特点
存储器类型
DDR2
DDR4
PassMark中的延时,ns
46
25
读取速度,GB/s
4,937.3
14.8
写入速度,GB/s
2,061.2
8.9
内存带宽,mbps
6400
17000
Other
描述
PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5
PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
时序/时钟速度
5-5-5-15 / 800 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)
759
2542
A-DATA Technology VDQVE1B16 2GB RAM的比较
takeMS International AG TMS2GS264D082665EQ 2GB
Qimonda 64T64000EU3SB2 512MB
Hynix Semiconductor (Hyundai Electronics) HMA82GU6MFR8N-TF 16GB RAM的比较
Samsung M3 78T3354BZ0-CCC 256MB
SpecTek Incorporated ?????????????????? 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Corsair CMZ16GX3M2A1866C9 8GB
Samsung M471A4G43AB1-CWE 32GB
Kingston KVR533D2N4 512MB
AMD R9S48G3206U2S 8GB
Golden Empire 1GB DDR2 800 CAS=4 1GB
Asgard VMA45UH-MEC1U2AW2 16GB
G Skill Intl F3-14900CL8-4GBXM 4GB
Corsair CMSX32GX4M2A2666C18 16GB
A-DATA Technology DQKD1A08 1GB
Kingston 9905700-053.A00G 8GB
A-DATA Technology VDQVE1B16 2GB
Kingston KF3200C20S4/8G 8GB
Ramaxel Technology RMT1970ED48E8F1066 2GB
G Skill Intl F4-4266C19-8GTZA 8GB
Kingston 9905316-106.A02LF 1GB
DSL Memory CIR-W4SUSS2408G 8GB
Samsung M471B1G73DB0-YK0 8GB
G Skill Intl F4-4133C19-8GTZRF 8GB
Kingston KVR533D2N4 512MB
V-GEN D4H8GL36A8TXV 8GB
A-DATA Technology DQKD1A08 1GB
Micron Technology 8ATF1G64AZ-2G6B1 8GB
Corsair CM3X8GA2400C11Y2R 8GB
Apacer Technology 78.C2GFA.AF30B 8GB
SK Hynix HYMP112U64CP8-S5 1GB
G Skill Intl F4-3200C14-8GTZN 8GB
AMD R538G1601U2S-UO 8GB
Hynix Semiconductor (Hyundai Electronics) HMA41GS6AFR8N
报告一个错误
×
Bug description
Source link