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A-DATA Technology VDQVE1B16 2GB
Samsung V-GeN D4S4GL30A16TS5 4GB

A-DATA Technology VDQVE1B16 2GB vs Samsung V-GeN D4S4GL30A16TS5 4GB

总分
star star star star star
A-DATA Technology VDQVE1B16 2GB

A-DATA Technology VDQVE1B16 2GB

总分
star star star star star
Samsung V-GeN D4S4GL30A16TS5 4GB

Samsung V-GeN D4S4GL30A16TS5 4GB

差异 规格 评论

差异

A-DATA Technology VDQVE1B16 2GB 需要考虑的原因
A-DATA Technology VDQVE1B16 2GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    46 left arrow 62
    左右 26% 更低的延时
  • 更快的读取速度，GB/s
    4 left arrow 16.7
    测试中的平均数值
Samsung V-GeN D4S4GL30A16TS5 4GB 需要考虑的原因
Samsung V-GeN D4S4GL30A16TS5 4GB
报告一个错误
  • 更快的写入速度，GB/s
    7.0 left arrow 2,061.2
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 6400
    左右 3 更高的带宽

规格

完整的技术规格清单
A-DATA Technology VDQVE1B16 2GB
Samsung V-GeN D4S4GL30A16TS5 4GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    46 left arrow 62
  • 读取速度，GB/s
    4,937.3 left arrow 16.7
  • 写入速度，GB/s
    2,061.2 left arrow 7.0
  • 内存带宽，mbps
    6400 left arrow 19200
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    759 left arrow 1808

A-DATA Technology VDQVE1B16 2GB RAM的比较

takeMS International AG TMS2GS264D082665EQ 2GB
Qimonda 64T64000EU3SB2 512MB

Samsung V-GeN D4S4GL30A16TS5 4GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston ACR512X64D3S13C9G 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
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