AMD AE34G1601U1 4GB vs Hynix Semiconductor (Hyundai Electronics) HMA81GS6JJR8N-VK 8GB

总分

AMD AE34G1601U1 4GB

AMD AE34G1601U1 4GB

总分

Hynix Semiconductor (Hyundai Electronics) HMA81GS6JJR8N-VK 8GB

Hynix Semiconductor (Hyundai Electronics) HMA81GS6JJR8N-VK 8GB

差异规格评论

差异

AMD AE34G1601U1 4GB

需要考虑的原因
AMD AE34G1601U1 4GB

报告一个错误

Hynix Semiconductor (Hyundai Electronics) HMA81GS6JJR8N-VK 8GB

需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMA81GS6JJR8N-VK 8GB

报告一个错误

低于PassMark测试中的延时，ns

26 67

左右 -158% 更低的延时
更快的读取速度，GB/s

16.8 6.8

测试中的平均数值
更快的写入速度，GB/s

13.5 3.6

测试中的平均数值
更高的内存带宽，mbps

21300 12800

左右 1.66 更高的带宽

规格

完整的技术规格清单

AMD AE34G1601U1 4GB

Hynix Semiconductor (Hyundai Electronics) HMA81GS6JJR8N-VK 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

67 26
读取速度，GB/s

6.8 16.8
写入速度，GB/s

3.6 13.5
内存带宽，mbps

12800 21300

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

9-9-9-24 / 1600 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

998 2880

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

AMD AE34G1601U1 4GB

AMD AE34G1601U1 4GB

Hynix Semiconductor (Hyundai Electronics) HMA81GS6JJR8N-VK 8GB

Hynix Semiconductor (Hyundai Electronics) HMA81GS6JJR8N

Kingston KHX1600C9S3L/8G 8GB

Kingston KHX1600C9S3L/8G 8GB

Gloway International Co. Ltd. STK4U2400D17082C 8GB

Gloway International Co. Ltd. STK4U2400D17082C 8GB

Kingmax Semiconductor FLFE85F-C8KM9 2GB

Kingmax Semiconductor FLFE85F-C8KM9 2GB

G Skill Intl F4-3200C16-4GRK 4GB

G Skill Intl F4-3200C16-4GRK 4GB

Kingston ACR512X64D3S13C9G 4GB

Kingston ACR512X64D3S13C9G 4GB

G Skill Intl F4-3333C16-16GVR 16GB

G Skill Intl F4-3333C16-16GVR 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Kingston 9905622-025.A01G 4GB

Kingston 9905622-025.A01G 4GB

Kingston KVR16N11/8-SP 8GB

Kingston KVR16N11/8-SP 8GB

G Skill Intl F4-3600C19-8GSXKB 8GB

G Skill Intl F4-3600C19-8GSXKB 8GB

A-DATA Technology AM2U16BC4P2-B05B 4GB

A-DATA Technology AM2U16BC4P2-B05B 4GB

Kingston 9905622-025.A01G 4GB

Kingston 9905622-025.A01G 4GB

Kingston KVR533D2N4 512MB

Kingston KVR533D2N4 512MB

G Skill Intl F4-2400C16-8GRS 8GB

G Skill Intl F4-2400C16-8GRS 8GB

SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB

SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB

G Skill Intl F4-2133C15-4GNT 4GB

G Skill Intl F4-2133C15-4GNT 4GB

Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB

Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A

G Skill Intl F4-3600C17-8GVK 8GB

G Skill Intl F4-3600C17-8GVK 8GB

Nanya Technology NT4GC64B8HG0NS-CG 4GB

Nanya Technology NT4GC64B8HG0NS-CG 4GB

Kingston 9905678-043.A00G 8GB

Kingston 9905678-043.A00G 8GB

PNY Electronics PNY 2GB

PNY Electronics PNY 2GB

Crucial Technology BLS4G4D26BFSC.8FB 4GB

Crucial Technology BLS4G4D26BFSC.8FB 4GB

Kingston 9905471-001.A01LF 2GB

Kingston 9905471-001.A01LF 2GB

V-Color Technology Inc. TL8G36818D-E6PRSWK 8GB

V-Color Technology Inc. TL8G36818D-E6PRSWK 8GB

Samsung M378T5663QZ3-CF7 2GB

Samsung M378T5663QZ3-CF7 2GB

Crucial Technology BLS8G4S26BFSD.16FD2 8GB

Crucial Technology BLS8G4S26BFSD.16FD2 8GB