AMD R538G1601S2LS 8GB vs Samsung M471B5173CB0-YK0 4GB

总分

AMD R538G1601S2LS 8GB

AMD R538G1601S2LS 8GB

总分

Samsung M471B5173CB0-YK0 4GB

Samsung M471B5173CB0-YK0 4GB

差异规格评论

差异

AMD R538G1601S2LS 8GB

需要考虑的原因
AMD R538G1601S2LS 8GB

报告一个错误

低于PassMark测试中的延时，ns

28 42

左右 33% 更低的延时
更快的写入速度，GB/s

8.2 7.9

测试中的平均数值

Samsung M471B5173CB0-YK0 4GB

需要考虑的原因
Samsung M471B5173CB0-YK0 4GB

报告一个错误

更快的读取速度，GB/s

11.9 11.3

测试中的平均数值

规格

完整的技术规格清单

AMD R538G1601S2LS 8GB

Samsung M471B5173CB0-YK0 4GB

主要特点

存储器类型

DDR3 DDR3
PassMark中的延时，ns

28 42
读取速度，GB/s

11.3 11.9
写入速度，GB/s

8.2 7.9
内存带宽，mbps

12800 12800

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11
时序/时钟速度

9-9-9-24 / 1600 MHz 9-9-9-24 / 1600 MHz
排名PassMark (越多越好)

1793 1979

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

AMD R538G1601S2LS 8GB

AMD R538G1601S2LS 8GB

Samsung M471B5173CB0-YK0 4GB

Samsung M471B5173CB0-YK0 4GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Apacer Technology 78.CAGQE.C750B 8GB

Apacer Technology 78.CAGQE.C750B 8GB

A-DATA Technology AD73I1C1674EV 4GB

A-DATA Technology AD73I1C1674EV 4GB

Kingston 9965600-005.A01G 16GB

Kingston 9965600-005.A01G 16GB

Micron Technology 18HTF12872AY-800F1 1GB

Micron Technology 18HTF12872AY-800F1 1GB

G Skill Intl F4-2666C18-32GTZN 32GB

G Skill Intl F4-2666C18-32GTZN 32GB

Kingston ACR512X64D3S13C9G 4GB

Kingston ACR512X64D3S13C9G 4GB

G Skill Intl F4-2933C16-16GTZRX 16GB

G Skill Intl F4-2933C16-16GTZRX 16GB

Samsung M471B5273EB0-CK0 4GB

Samsung M471B5273EB0-CK0 4GB

G Skill Intl F4-3466C16-8GVR 8GB

G Skill Intl F4-3466C16-8GVR 8GB

G Skill Intl F3-2666C12-8GTXD 8GB

G Skill Intl F3-2666C12-8GTXD 8GB

Kingston 9905678-033.A00G 4GB

Kingston 9905678-033.A00G 4GB

Samsung M3 78T5663EH3-CF7 2GB

Samsung M3 78T5663EH3-CF7 2GB

Unifosa Corporation GU342G0ALEPR692C6F 2GB

Unifosa Corporation GU342G0ALEPR692C6F 2GB

Samsung M393B2G70BH0-CH9 16GB

Samsung M393B2G70BH0-CH9 16GB

Corsair CMD16GX4M4A2666C16 4GB

Corsair CMD16GX4M4A2666C16 4GB

Wilk Elektronik S.A. GY1866D364L9A/4G 4GB

Wilk Elektronik S.A. GY1866D364L9A/4G 4GB

Chun Well Technology Holding Limited CL18-20-20 D4-3600 8GB

Chun Well Technology Holding Limited CL18-20-20 D4-3600

Samsung M471B5673FH0-CF8 2GB

Samsung M471B5673FH0-CF8 2GB

Hynix Semiconductor (Hyundai Electronics) HMAA4GU6AJR8N-VK 32GB

Hynix Semiconductor (Hyundai Electronics) HMAA4GU6AJR8N

Samsung M3 78T3354BZ0-CCC 256MB

Samsung M3 78T3354BZ0-CCC 256MB

G Skill Intl F4-3466C16-8GTZSK 8GB

G Skill Intl F4-3466C16-8GTZSK 8GB

Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB

Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C

Apacer Technology 78.C2GFL.C720B 8GB

Apacer Technology 78.C2GFL.C720B 8GB

A-DATA Technology VDQVE1B16 2GB

A-DATA Technology VDQVE1B16 2GB

Micron Technology 16A6A2G64HZ-2-2E1 16GB

Micron Technology 16A6A2G64HZ-2-2E1 16GB