AMD R538G1601U2S 8GB vs Mushkin MRA4S300GJJM16G 16GB

总分

AMD R538G1601U2S 8GB

AMD R538G1601U2S 8GB

总分

Mushkin MRA4S300GJJM16G 16GB

Mushkin MRA4S300GJJM16G 16GB

差异规格评论

差异

AMD R538G1601U2S 8GB

需要考虑的原因
AMD R538G1601U2S 8GB

报告一个错误

低于PassMark测试中的延时，ns

19 78

左右 76% 更低的延时
更快的读取速度，GB/s

18.4 12.1

测试中的平均数值
更快的写入速度，GB/s

12.3 10.3

测试中的平均数值

Mushkin MRA4S300GJJM16G 16GB

需要考虑的原因
Mushkin MRA4S300GJJM16G 16GB

报告一个错误

更高的内存带宽，mbps

19200 12800

左右 1.5 更高的带宽

规格

完整的技术规格清单

AMD R538G1601U2S 8GB

Mushkin MRA4S300GJJM16G 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

19 78
读取速度，GB/s

18.4 12.1
写入速度，GB/s

12.3 10.3
内存带宽，mbps

12800 19200

Other

描述

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

3189 2113

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Samsung M471B5673FH0-CF8 2GB

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Samsung 1600 CL10 Series 8GB

Samsung 1600 CL10 Series 8GB

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SK Hynix HMA82GU7MFR8N-TF 16GB

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SK Hynix HYMP112S64CP6-S6 1GB

Kingston MSI26D4S9S8HJ-8 8GB

Kingston MSI26D4S9S8HJ-8 8GB

G Skill Intl F3-1866C8-8GTX 8GB

G Skill Intl F3-1866C8-8GTX 8GB

Corsair CMK64GX4M4A2400C14 16GB

Corsair CMK64GX4M4A2400C14 16GB

Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR4N-TF 8GB

Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR4N

Corsair CMSO32GX4M2A2133C15 16GB

Corsair CMSO32GX4M2A2133C15 16GB

Samsung M471A1K43DB1-CTD 8GB

Samsung M471A1K43DB1-CTD 8GB

G Skill Intl F4-3600C14-8GTZNB 8GB

G Skill Intl F4-3600C14-8GTZNB 8GB