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Apacer Technology 78.A1GC6.9H10C 2GB
Crucial Technology CT16G4DFD8266.M16FE 16GB

Apacer Technology 78.A1GC6.9H10C 2GB vs Crucial Technology CT16G4DFD8266.M16FE 16GB

总分
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Apacer Technology 78.A1GC6.9H10C 2GB

Apacer Technology 78.A1GC6.9H10C 2GB

总分
star star star star star
Crucial Technology CT16G4DFD8266.M16FE 16GB

Crucial Technology CT16G4DFD8266.M16FE 16GB

差异 规格 评论

差异

Apacer Technology 78.A1GC6.9H10C 2GB 需要考虑的原因
Apacer Technology 78.A1GC6.9H10C 2GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    26 left arrow 33
    左右 21% 更低的延时
Crucial Technology CT16G4DFD8266.M16FE 16GB 需要考虑的原因
Crucial Technology CT16G4DFD8266.M16FE 16GB
报告一个错误
  • 更快的读取速度，GB/s
    16.5 left arrow 13.4
    测试中的平均数值
  • 更快的写入速度，GB/s
    13.6 left arrow 8.4
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 10600
    左右 2.01 更高的带宽

规格

完整的技术规格清单
Apacer Technology 78.A1GC6.9H10C 2GB
Crucial Technology CT16G4DFD8266.M16FE 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    26 left arrow 33
  • 读取速度，GB/s
    13.4 left arrow 16.5
  • 写入速度，GB/s
    8.4 left arrow 13.6
  • 内存带宽，mbps
    10600 left arrow 21300
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC4-21300, 1.2V, CAS Supported: 10 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    2050 left arrow 3367

Apacer Technology 78.A1GC6.9H10C 2GB RAM的比较

Apacer Technology 78.A1GC6.9L1 2GB
Kingston CBD26D4S9S8ME-8 8GB

Crucial Technology CT16G4DFD8266.M16FE 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston MSI26D4S9D8ME-16 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

Apacer Technology 78.A1GC6.9H10C 2GB
Apacer Technology 78.A1GC6.9H10C 2GB
Crucial Technology CT16G4DFD8266.M16FE 16GB
Crucial Technology CT16G4DFD8266.M16FE 16GB
内存RAM
Samsung M393B1K70QB0-CK0 8GB
Samsung M393B1K70QB0-CK0 8GB
Patriot Memory (PDP Systems) 3000 C15 Series 8GB
Patriot Memory (PDP Systems) 3000 C15 Series 8GB
内存RAM
A-DATA Technology DOVF1B163G2G 2GB
A-DATA Technology DOVF1B163G2G 2GB
Gold Key Technology Co Ltd GKE800SO102408-3200 8GB
Gold Key Technology Co Ltd GKE800SO102408-3200 8GB
内存RAM
Corsair CMX8GX3M2A1600C11 4GB
Corsair CMX8GX3M2A1600C11 4GB
Dust Leopard DDR4-2400 C17 8GB 8GB
Dust Leopard DDR4-2400 C17 8GB 8GB
内存RAM
Smart Modular SG564568FG8N6KF-Z2 2GB
Smart Modular SG564568FG8N6KF-Z2 2GB
Hynix Semiconductor (Hyundai Electronics) HMA81GU6CJR8N-VK 8GB
Hynix Semiconductor (Hyundai Electronics) HMA81GU6CJR8N
内存RAM
Samsung M378B5273DH0-CH9 4GB
Samsung M378B5273DH0-CH9 4GB
G Skill Intl F4-3000C16-8GTZR 8GB
G Skill Intl F4-3000C16-8GTZR 8GB
内存RAM
Kingston 99U5428-018.A00LF 8GB
Kingston 99U5428-018.A00LF 8GB
G Skill Intl F4-2666C15-16GVR 16GB
G Skill Intl F4-2666C15-16GVR 16GB
内存RAM
A-DATA Technology AD73I1B1672EG 2GB
A-DATA Technology AD73I1B1672EG 2GB
Crucial Technology BLS8G4D32AESCK.M8FE1 8GB
Crucial Technology BLS8G4D32AESCK.M8FE1 8GB
内存RAM
AMD R534G1601U1S-UO 4GB
AMD R534G1601U1S-UO 4GB
G Skill Intl F4-4266C19-8GTZSW 8GB
G Skill Intl F4-4266C19-8GTZSW 8GB
内存RAM
A-DATA Technology DQVE1908 512MB
A-DATA Technology DQVE1908 512MB
Micron Technology 18ADF2G72PZ-2G3B1 16GB
Micron Technology 18ADF2G72PZ-2G3B1 16GB
内存RAM
Samsung M471B5173DB0-YK0 4GB
Samsung M471B5173DB0-YK0 4GB
Corsair CMD32GX4M2B2800C14 16GB
Corsair CMD32GX4M2B2800C14 16GB
内存RAM
Golden Empire 1GB DDR2 800 CAS=4 1GB
Golden Empire 1GB DDR2 800 CAS=4 1GB
Crucial Technology CT8G4DFD8213.16FA11 8GB
Crucial Technology CT8G4DFD8213.16FA11 8GB
内存RAM
A-DATA Technology DOVF1B163G2G 2GB
A-DATA Technology DOVF1B163G2G 2GB
Kingston HP26D4U9S1ME-4 4GB
Kingston HP26D4U9S1ME-4 4GB
内存RAM
Kingston 2GB-DDR2 800Mhz 2GB
Kingston 2GB-DDR2 800Mhz 2GB
Corsair CMH16GX4M2E3200C16 8GB
Corsair CMH16GX4M2E3200C16 8GB
内存RAM