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ASint Technology SSA302G08-EGN1C 4GB
Maxsun MSD48G26Q3 8GB

ASint Technology SSA302G08-EGN1C 4GB vs Maxsun MSD48G26Q3 8GB

总分
star star star star star
ASint Technology SSA302G08-EGN1C 4GB

ASint Technology SSA302G08-EGN1C 4GB

总分
star star star star star
Maxsun MSD48G26Q3 8GB

Maxsun MSD48G26Q3 8GB

差异 规格 评论

差异

ASint Technology SSA302G08-EGN1C 4GB 需要考虑的原因
ASint Technology SSA302G08-EGN1C 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    26 left arrow 51
    左右 49% 更低的延时
Maxsun MSD48G26Q3 8GB 需要考虑的原因
Maxsun MSD48G26Q3 8GB
报告一个错误
  • 更快的读取速度，GB/s
    13.9 left arrow 12.6
    测试中的平均数值
  • 更快的写入速度，GB/s
    9.6 left arrow 9.5
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 12800
    左右 1.66 更高的带宽

规格

完整的技术规格清单
ASint Technology SSA302G08-EGN1C 4GB
Maxsun MSD48G26Q3 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    26 left arrow 51
  • 读取速度，GB/s
    12.6 left arrow 13.9
  • 写入速度，GB/s
    9.5 left arrow 9.6
  • 内存带宽，mbps
    12800 left arrow 21300
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    2174 left arrow 2720

ASint Technology SSA302G08-EGN1C 4GB RAM的比较

Samsung M471B5273CH0-CH9 4GB
Ramaxel Technology RMT3160ED58E9W1600 4GB

Maxsun MSD48G26Q3 8GB RAM的比较

Kingston 9905403-156.A00LF 2GB
Kingston 9905403-444.A00LF 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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内存RAM
SK Hynix HYMP31GF72CMP4D5Y5 8GB
SK Hynix HYMP31GF72CMP4D5Y5 8GB
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内存RAM
Corsair VSA2GSDS667C4 2GB
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内存RAM
SK Hynix HYMP125U64CP8-S6 2GB
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内存RAM
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内存RAM
A-DATA Technology AM2L16BC4R1-B0CS 4GB
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内存RAM
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A-DATA Technology AD73I1B1672EG 2GB
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内存RAM
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内存RAM
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内存RAM
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内存RAM
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内存RAM
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Apacer Technology 78.C1GMS.C7Z0C 8GB
内存RAM
G Skill Intl F3-14900CL8-4GBXM 4GB
G Skill Intl F3-14900CL8-4GBXM 4GB
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Kingston 9905701-143.A00G 16GB
内存RAM