Chun Well Technology Holding Limited CL16-18-18 D4-3200 16GB

Corsair CMT32GX5M2X5600C36 16GB

Chun Well Technology Holding Limited CL16-18-18 D4-3200 16GB vs Corsair CMT32GX5M2X5600C36 16GB

总分

Chun Well Technology Holding Limited CL16-18-18 D4-3200 16GB

Chun Well Technology Holding Limited CL16-18-18 D4-3200 16GB

总分

Corsair CMT32GX5M2X5600C36 16GB

Corsair CMT32GX5M2X5600C36 16GB

差异规格评论

差异

Chun Well Technology Holding Limited CL16-18-18 D4-3200 16GB

需要考虑的原因
Chun Well Technology Holding Limited CL16-18-18 D4-3200 16GB

报告一个错误

更快的读取速度，GB/s

18.1 15.2

测试中的平均数值
更快的写入速度，GB/s

14.8 13.5

测试中的平均数值

Corsair CMT32GX5M2X5600C36 16GB

需要考虑的原因
Corsair CMT32GX5M2X5600C36 16GB

报告一个错误

低于PassMark测试中的延时，ns

25 28

左右 -12% 更低的延时
更高的内存带宽，mbps

19200 17000

左右 1.13 更高的带宽

规格

完整的技术规格清单

Chun Well Technology Holding Limited CL16-18-18 D4-3200 16GB

Corsair CMT32GX5M2X5600C36 16GB

主要特点

存储器类型

DDR4 DDR5
PassMark中的延时，ns

28 25
读取速度，GB/s

18.1 15.2
写入速度，GB/s

14.8 13.5
内存带宽，mbps

17000 19200

Other

描述

PC4-17000, 1.2V, CAS Supported: 14 15 16 PC5-19200, 1.1V, CAS Supported: 22 28 30 32 36 40 42
时序/时钟速度

14-14-14, 15-15-15, 16-16-16 / 2133 MHz no data / 2400 MHz
排名PassMark (越多越好)

3564 3599

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Crucial Technology CT51264BD1339.M16F 4GB

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Wilk Elektronik S.A. IR2400D464L15S/4G 4GB

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Kingston 99U5474-010.A00LF 2GB

Corsair CMK16GX4M2D3200C16 8GB

Corsair CMK16GX4M2D3200C16 8GB

Nanya Technology M2X4G64CB8HG5N-DG 4GB

Nanya Technology M2X4G64CB8HG5N-DG 4GB

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Crucial Technology BLS16G4D32AESE.M16FE 16GB

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Kingston ACR26D4S9S8MH-8 8GB

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Samsung M471A4G43AB1-CWE 32GB

Samsung M471A4G43AB1-CWE 32GB