Corsair CM3X8GA2400C11Y2R 8GB vs Crucial Technology BLS8G4S240FSD.M16FAD 8GB

总分

Corsair CM3X8GA2400C11Y2R 8GB

Corsair CM3X8GA2400C11Y2R 8GB

总分

Crucial Technology BLS8G4S240FSD.M16FAD 8GB

Crucial Technology BLS8G4S240FSD.M16FAD 8GB

差异规格评论

差异

Corsair CM3X8GA2400C11Y2R 8GB

需要考虑的原因
Corsair CM3X8GA2400C11Y2R 8GB

报告一个错误

低于PassMark测试中的延时，ns

20 26

左右 23% 更低的延时
更快的读取速度，GB/s

19.1 15.1

测试中的平均数值
更快的写入速度，GB/s

13.1 11.6

测试中的平均数值

Crucial Technology BLS8G4S240FSD.M16FAD 8GB

需要考虑的原因
Crucial Technology BLS8G4S240FSD.M16FAD 8GB

报告一个错误

更高的内存带宽，mbps

19200 10600

左右 1.81 更高的带宽

规格

完整的技术规格清单

Corsair CM3X8GA2400C11Y2R 8GB

Crucial Technology BLS8G4S240FSD.M16FAD 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

20 26
读取速度，GB/s

19.1 15.1
写入速度，GB/s

13.1 11.6
内存带宽，mbps

10600 19200

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 8 9 PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
时序/时钟速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

3252 2579

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

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Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Crucial Technology BL32G32C16U4W.M16FB1 32GB

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A-DATA Technology AM2L16BC4R1-B0AS 4GB

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Micron Technology 16ATF4G64HZ-2G6B2 32GB

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Wilk Elektronik S.A. IRX3200D464L16/16G 16GB

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Crucial Technology CT16G4SFD824A.C16FDD 16GB

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Micron Technology 18HTF12872AY-800F1 1GB

Micron Technology 18HTF12872AY-800F1 1GB

Kingston KMKYF9-HYA 8GB

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Samsung M3 93T5750CZA-CE6 2GB

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Kingston 9905678-005.A00G 8GB

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Kingmax Semiconductor FLGF65F-C8KJ9A 4GB

Kingmax Semiconductor FLGF65F-C8KJ9A 4GB

G Skill Intl F4-3600C16-16GTZR 16GB

G Skill Intl F4-3600C16-16GTZR 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Corsair CM4X8GE2400C15K4 8GB

Corsair CM4X8GE2400C15K4 8GB