Corsair CMD8GX3M2A2933C12 4GB vs Crucial Technology CT16G4SFD8266.C16FE 16GB

总分

Corsair CMD8GX3M2A2933C12 4GB

Corsair CMD8GX3M2A2933C12 4GB

总分

Crucial Technology CT16G4SFD8266.C16FE 16GB

Crucial Technology CT16G4SFD8266.C16FE 16GB

差异规格评论

差异

Corsair CMD8GX3M2A2933C12 4GB

需要考虑的原因
Corsair CMD8GX3M2A2933C12 4GB

报告一个错误

低于PassMark测试中的延时，ns

28 37

左右 24% 更低的延时

Crucial Technology CT16G4SFD8266.C16FE 16GB

需要考虑的原因
Crucial Technology CT16G4SFD8266.C16FE 16GB

报告一个错误

更快的读取速度，GB/s

14.9 13.5

测试中的平均数值
更快的写入速度，GB/s

13.0 9.3

测试中的平均数值
更高的内存带宽，mbps

21300 10600

左右 2.01 更高的带宽

规格

完整的技术规格清单

Corsair CMD8GX3M2A2933C12 4GB

Crucial Technology CT16G4SFD8266.C16FE 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

28 37
读取速度，GB/s

13.5 14.9
写入速度，GB/s

9.3 13.0
内存带宽，mbps

10600 21300

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 8 9 PC4-21300, 1.2V, CAS Supported: 10 12 13 14 15 16 17 18 19 20
时序/时钟速度

7-7-7-20 / 1333 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2278 2836

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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Frequency (Mhz) *

Absolute Latency

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Samsung M471A2K43BB1-CPB 16GB

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Kingston 99U5428-018.A00LF 8GB

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Micron Technology 16ATF2G64AZ-2G1B1 16GB

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Ramos Technology EWB8GB681CA3-16IC 8GB

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Micron Technology 16ATF2G64HZ-2G3A1 16GB

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Kingston KHX1600C9D3/8G 8GB

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EVGA 8GX-D4-2800-MR 8GB

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SK Hynix DDR2 800 2G 2GB

SK Hynix DDR2 800 2G 2GB

Kingston ACR24D4U7D8MB-16 16GB

Kingston ACR24D4U7D8MB-16 16GB

Micron Technology 8JSF25664HZ-1G4D1 2GB

Micron Technology 8JSF25664HZ-1G4D1 2GB

Ramaxel Technology RMSA3270MB86H9F2400 4GB

Ramaxel Technology RMSA3270MB86H9F2400 4GB

Nanya Technology M2F4G64CB8HB9N-CG 4GB

Nanya Technology M2F4G64CB8HB9N-CG 4GB

G Skill Intl F4-2933C16-8GTZRX 8GB

G Skill Intl F4-2933C16-8GTZRX 8GB

Kingston 99U5429-007.A00LF 2GB

Kingston 99U5429-007.A00LF 2GB

Crucial Technology CT16G4SFDFD4A.M16FH 16GB

Crucial Technology CT16G4SFDFD4A.M16FH 16GB