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Corsair CMK32GX5M2B5600C36 16GB
Shanghai Kuxin Microelectronics Ltd NMSO480E82-2400 8GB

Corsair CMK32GX5M2B5600C36 16GB vs Shanghai Kuxin Microelectronics Ltd NMSO480E82-2400 8GB

总分
star star star star star
Corsair CMK32GX5M2B5600C36 16GB

Corsair CMK32GX5M2B5600C36 16GB

总分
star star star star star
Shanghai Kuxin Microelectronics Ltd NMSO480E82-2400 8GB

Shanghai Kuxin Microelectronics Ltd NMSO480E82-2400 8GB

差异 规格 评论

差异

Corsair CMK32GX5M2B5600C36 16GB 需要考虑的原因
Corsair CMK32GX5M2B5600C36 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    27 left arrow 71
    左右 62% 更低的延时
  • 更快的读取速度，GB/s
    15.7 left arrow 15.5
    测试中的平均数值
  • 更快的写入速度，GB/s
    13.9 left arrow 8.3
    测试中的平均数值
Shanghai Kuxin Microelectronics Ltd NMSO480E82-2400 8GB 需要考虑的原因
Shanghai Kuxin Microelectronics Ltd NMSO480E82-2400 8GB
报告一个错误

规格

完整的技术规格清单
Corsair CMK32GX5M2B5600C36 16GB
Shanghai Kuxin Microelectronics Ltd NMSO480E82-2400 8GB
主要特点
  • 存储器类型
    DDR5 left arrow DDR4
  • PassMark中的延时，ns
    27 left arrow 71
  • 读取速度，GB/s
    15.7 left arrow 15.5
  • 写入速度，GB/s
    13.9 left arrow 8.3
  • 内存带宽，mbps
    19200 left arrow 19200
Other
  • 描述
    PC5-19200, 1.1V, CAS Supported: 22 28 30 32 36 40 42 left arrow PC4-19200, 1.2V, CAS Supported: 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    no data / 2400 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    3576 left arrow 1902

Corsair CMK32GX5M2B5600C36 16GB RAM的比较

Samsung 18ASF1G72PDZ-2G1B1 16GB
Corsair CMV8GX4M1A2133C15 8GB

Shanghai Kuxin Microelectronics Ltd NMSO480E82-2400 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Samsung M378T5663QZ3-CF7 2GB
Samsung M378T5663QZ3-CF7 2GB
GIGA - BYTE Technology Co Ltd AR32C16S8K2SU416R 8GB
GIGA - BYTE Technology Co Ltd AR32C16S8K2SU416R 8GB
内存RAM
Kingston KVR533D2N4 512MB
Kingston KVR533D2N4 512MB
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Kingston KHX2800C14D4/4GX 4GB
内存RAM
Corsair CMK32GX5M2B5600C36 16GB
Corsair CMK32GX5M2B5600C36 16GB
Shanghai Kuxin Microelectronics Ltd NMSO480E82-2400 8GB
Shanghai Kuxin Microelectronics Ltd NMSO480E82-2400 8GB
内存RAM
Elpida EBJ21UE8BDF0-DJ-F 2GB
Elpida EBJ21UE8BDF0-DJ-F 2GB
Samsung M391A1G43EB1-CPB 8GB
Samsung M391A1G43EB1-CPB 8GB
内存RAM
Patriot Memory (PDP Systems) PSD38G16002 8GB
Patriot Memory (PDP Systems) PSD38G16002 8GB
Micron Technology 9ASF51272PZ-2G1AX 4GB
Micron Technology 9ASF51272PZ-2G1AX 4GB
内存RAM
A-DATA Technology AM2L16BC4R1-B0AS 4GB
A-DATA Technology AM2L16BC4R1-B0AS 4GB
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Crucial Technology CT8G4SFD824A.C16FF 8GB
内存RAM
Kingston 9965525-140.A00LF 8GB
Kingston 9965525-140.A00LF 8GB
Corsair CM4X8GF2400C14K4 8GB
Corsair CM4X8GF2400C14K4 8GB
内存RAM
SK Hynix HYMP112U64CP8-Y5 1GB
SK Hynix HYMP112U64CP8-Y5 1GB
Micron Technology 18ADF2G72PZ-2G3B1 16GB
Micron Technology 18ADF2G72PZ-2G3B1 16GB
内存RAM
Crucial Technology 8G4US2400.M8B1 8GB
Crucial Technology 8G4US2400.M8B1 8GB
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Team Group Inc. DDR4 2666 8GB
内存RAM
Samsung M3 78T5663RZ3-CF7 2GB
Samsung M3 78T5663RZ3-CF7 2GB
Crucial Technology BLS4G4D26BFSE.8FB 4GB
Crucial Technology BLS4G4D26BFSE.8FB 4GB
内存RAM
Patriot Memory (PDP Systems) PSD34G16002 4GB
Patriot Memory (PDP Systems) PSD34G16002 4GB
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Kingston 9905744-066.A00G 32GB
内存RAM
A-DATA Technology ADOVE1A0834E 1GB
A-DATA Technology ADOVE1A0834E 1GB
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Corsair CMK16GX4M4C3200C15 4GB
内存RAM
Corsair CM3X8GA2400C11Y2R 8GB
Corsair CM3X8GA2400C11Y2R 8GB
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Crucial Technology BLE8G4D34AEEAK.K8FB 8GB
内存RAM
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Samsung M471A1K43CB1-CRC 8GB
Samsung M471A1K43CB1-CRC 8GB
内存RAM