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Corsair CML8GX3M2A1600C9 4GB
Team Group Inc. TEAMGROUP-UD4-2666 8GB

Corsair CML8GX3M2A1600C9 4GB vs Team Group Inc. TEAMGROUP-UD4-2666 8GB

总分
star star star star star
Corsair CML8GX3M2A1600C9 4GB

Corsair CML8GX3M2A1600C9 4GB

总分
star star star star star
Team Group Inc. TEAMGROUP-UD4-2666 8GB

Team Group Inc. TEAMGROUP-UD4-2666 8GB

差异 规格 评论

差异

Corsair CML8GX3M2A1600C9 4GB 需要考虑的原因
Corsair CML8GX3M2A1600C9 4GB
报告一个错误
Team Group Inc. TEAMGROUP-UD4-2666 8GB 需要考虑的原因
Team Group Inc. TEAMGROUP-UD4-2666 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    32 left arrow 39
    左右 -22% 更低的延时
  • 更快的读取速度，GB/s
    16.1 left arrow 14.6
    测试中的平均数值
  • 更快的写入速度，GB/s
    12.0 left arrow 8.8
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 10600
    左右 1.6 更高的带宽

规格

完整的技术规格清单
Corsair CML8GX3M2A1600C9 4GB
Team Group Inc. TEAMGROUP-UD4-2666 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    39 left arrow 32
  • 读取速度，GB/s
    14.6 left arrow 16.1
  • 写入速度，GB/s
    8.8 left arrow 12.0
  • 内存带宽，mbps
    10600 left arrow 17000
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2355 left arrow 3054

Corsair CML8GX3M2A1600C9 4GB RAM的比较

G Skill Intl F3-12800CL7-4GBRH 4GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Team Group Inc. TEAMGROUP-UD4-2666 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

Corsair CML8GX3M2A1600C9 4GB
Corsair CML8GX3M2A1600C9 4GB
Team Group Inc. TEAMGROUP-UD4-2666 8GB
Team Group Inc. TEAMGROUP-UD4-2666 8GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Corsair CMK16GX4M2Z2400C16 8GB
Corsair CMK16GX4M2Z2400C16 8GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
G Skill Intl F4-3600C17-4GVK 4GB
G Skill Intl F4-3600C17-4GVK 4GB
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SK Hynix HMT351U6CFR8C-H9 4GB
SK Hynix HMT351U6CFR8C-H9 4GB
Crucial Technology BL8G36C16U4BL.M8FE1 8GB
Crucial Technology BL8G36C16U4BL.M8FE1 8GB
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Samsung M393B1K70CH0-CH9 8GB
Samsung M393B1K70CH0-CH9 8GB
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Corsair CMD32GX4M4C3200C14T 8GB
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Avant Technology F641GU67F9333G 8GB
Kingston KHX3200C18D4/8G 8GB
Kingston KHX3200C18D4/8G 8GB
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Kingston 99U5584-004.A00LF 4GB
Kingston 99U5584-004.A00LF 4GB
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Roa Logic BV W4U2666CX1-8G 8GB
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A-DATA Technology AM2L16BC4R1-B0AS 4GB
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Asgard VMA45UG-MEC1U2AW1 8GB
Asgard VMA45UG-MEC1U2AW1 8GB
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G Skill Intl F4-4000C18-8GTZRB 8GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd MD401GNSE-CB3M2 8GB
Hoodisk Electronics Co Ltd MD401GNSE-CB3M2 8GB
内存RAM
Corsair CMZ16GX3M2A2400C10 8GB
Corsair CMZ16GX3M2A2400C10 8GB
Crucial Technology BL8G32C16U4B.M8FE 8GB
Crucial Technology BL8G32C16U4B.M8FE 8GB
内存RAM
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Micron Technology 4ATF51264AZ-3G2E1 4GB
内存RAM
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A-DATA Technology DQVE1908 512MB
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Asgard VMA45UG-MEC1U2BQ2 8GB
内存RAM
Kingston 9905403-061.A00LF 2GB
Kingston 9905403-061.A00LF 2GB
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Micron Technology 36ASF4G72PZ-2G3D1 32GB
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