Corsair CML8GX3M2A1866C9 4GB vs Kingston KHX3333C17D4/4GX 4GB

总分

Corsair CML8GX3M2A1866C9 4GB

Corsair CML8GX3M2A1866C9 4GB

总分

Kingston KHX3333C17D4/4GX 4GB

Kingston KHX3333C17D4/4GX 4GB

差异规格评论

差异

Corsair CML8GX3M2A1866C9 4GB

需要考虑的原因
Corsair CML8GX3M2A1866C9 4GB

报告一个错误

更快的读取速度，GB/s

14.1 12

测试中的平均数值

Kingston KHX3333C17D4/4GX 4GB

需要考虑的原因
Kingston KHX3333C17D4/4GX 4GB

报告一个错误

低于PassMark测试中的延时，ns

28 38

左右 -36% 更低的延时
更快的写入速度，GB/s

9.9 8.7

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Corsair CML8GX3M2A1866C9 4GB

Kingston KHX3333C17D4/4GX 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

38 28
读取速度，GB/s

14.1 12.0
写入速度，GB/s

8.7 9.9
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2228 2537

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Micron Technology 36ASF2G72PZ-2G1A2 16GB

Micron Technology 36ASF2G72PZ-2G1A2 16GB

Micron Technology TEAMGROUP-UD4-2400 16GB

Micron Technology TEAMGROUP-UD4-2400 16GB

Corsair CMX8GX3M2A1600C11 4GB

Corsair CMX8GX3M2A1600C11 4GB

Avant Technology W6451U48J7240N6 4GB

Avant Technology W6451U48J7240N6 4GB

Kingston KHX2133C11D3/4GX 4GB

Kingston KHX2133C11D3/4GX 4GB

G Skill Intl F4-4000C16-16GTZRA 16GB

G Skill Intl F4-4000C16-16GTZRA 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

G Skill Intl F4-3200C15-16GVK 16GB

G Skill Intl F4-3200C15-16GVK 16GB

G Skill Intl F3-2133C9-4GAB 4GB

G Skill Intl F3-2133C9-4GAB 4GB

Samsung M471A1K43DB1-CWE 8GB

Samsung M471A1K43DB1-CWE 8GB

PNY Electronics PNY 2GB

PNY Electronics PNY 2GB

G Skill Intl F4-4266C17-8GTZR 8GB

G Skill Intl F4-4266C17-8GTZR 8GB

Strontium EVMT8G1600U86S 8GB

Strontium EVMT8G1600U86S 8GB

Thermaltake Technology Co Ltd R009D408GX2-4400C19A 8GB

Thermaltake Technology Co Ltd R009D408GX2-4400C19A 8GB

Kingston KHX1600C9D3/4G 4GB

Kingston KHX1600C9D3/4G 4GB

Patriot Memory (PDP Systems) PSD32G160081 2GB

Patriot Memory (PDP Systems) PSD32G160081 2GB

PNY Electronics PNY 2GB

PNY Electronics PNY 2GB

Crucial Technology BL16G32C16U4B.M8FB1 16GB

Crucial Technology BL16G32C16U4B.M8FB1 16GB

Nanya Technology M2F8G64CB8HC9N-DI 8GB

Nanya Technology M2F8G64CB8HC9N-DI 8GB

Transcend Information TS2GSH64V1B 16GB

Transcend Information TS2GSH64V1B 16GB

TwinMOS 8DPT5MK8-TATP 2GB

TwinMOS 8DPT5MK8-TATP 2GB

Avexir Technologies Corporation DDR4-2666 C17 4GB 4GB

Avexir Technologies Corporation DDR4-2666 C17 4GB 4GB

Ramaxel Technology RMR5030ME68F9F1600 4GB

Ramaxel Technology RMR5030ME68F9F1600 4GB

Crucial Technology CT4G4DFS8266.M8FE 4GB

Crucial Technology CT4G4DFS8266.M8FE 4GB

Micron Technology 8JSF25664HZ-1G4D1 2GB

Micron Technology 8JSF25664HZ-1G4D1 2GB

A-DATA Technology AO1P32NC8W1-BDZS 8GB

A-DATA Technology AO1P32NC8W1-BDZS 8GB

Samsung M3 78T5663RZ3-CF7 2GB

Samsung M3 78T5663RZ3-CF7 2GB

Crucial Technology CT16G4SFD824A.M16FH 16GB

Crucial Technology CT16G4SFD824A.M16FH 16GB