Corsair CML8GX3M2A1866C9 4GB vs Samsung M393A2G40EB2-CTD 16GB

总分

Corsair CML8GX3M2A1866C9 4GB

Corsair CML8GX3M2A1866C9 4GB

总分

Samsung M393A2G40EB2-CTD 16GB

Samsung M393A2G40EB2-CTD 16GB

差异规格评论

差异

Corsair CML8GX3M2A1866C9 4GB

需要考虑的原因
Corsair CML8GX3M2A1866C9 4GB

报告一个错误

低于PassMark测试中的延时，ns

38 44

左右 14% 更低的延时
更快的读取速度，GB/s

14.1 8.5

测试中的平均数值
更快的写入速度，GB/s

8.7 5.6

测试中的平均数值

Samsung M393A2G40EB2-CTD 16GB

需要考虑的原因
Samsung M393A2G40EB2-CTD 16GB

报告一个错误

更高的内存带宽，mbps

21300 10600

左右 2.01 更高的带宽

规格

完整的技术规格清单

Corsair CML8GX3M2A1866C9 4GB

Samsung M393A2G40EB2-CTD 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

38 44
读取速度，GB/s

14.1 8.5
写入速度，GB/s

8.7 5.6
内存带宽，mbps

10600 21300

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

7-7-7-20 / 1333 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2228 1660

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

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Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Corsair CML8GX3M2A1866C9 4GB

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Samsung M393A2G40EB2-CTD 16GB

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Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

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Crucial Technology CT16G4DFD8266.C16FJ 16GB

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Samsung M471B5273DH0-CK0 4GB

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Ramsta Ramsta-2400Mhz-4G 4GB

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Samsung M4 70T5663QZ3-CF7 2GB

Kingston 9965640-006.A01G 32GB

Kingston 9965640-006.A01G 32GB

Corsair CMD16GX3M2A1866C9 8GB

Corsair CMD16GX3M2A1866C9 8GB

SanMax Technologies Inc. SMD4-U8G48HA-24RF 8GB

SanMax Technologies Inc. SMD4-U8G48HA-24RF 8GB

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Corsair CMD32GX4M4B2400C10 8GB

Corsair CMD32GX4M4B2400C10 8GB

Kingston KVR800D2N6/2G 2GB

Kingston KVR800D2N6/2G 2GB

Kingston KST-2133MHZ-4G 4GB

Kingston KST-2133MHZ-4G 4GB