Corsair CMX4GX3M2A1600C9 2GB vs Corsair CMD32GX4M4B2400C10 8GB

总分

Corsair CMX4GX3M2A1600C9 2GB

Corsair CMX4GX3M2A1600C9 2GB

总分

Corsair CMD32GX4M4B2400C10 8GB

Corsair CMD32GX4M4B2400C10 8GB

差异规格评论

差异

Corsair CMX4GX3M2A1600C9 2GB

需要考虑的原因
Corsair CMX4GX3M2A1600C9 2GB

报告一个错误

Corsair CMD32GX4M4B2400C10 8GB

需要考虑的原因
Corsair CMD32GX4M4B2400C10 8GB

报告一个错误

低于PassMark测试中的延时，ns

31 38

左右 -23% 更低的延时
更快的读取速度，GB/s

16.1 13.9

测试中的平均数值
更快的写入速度，GB/s

11.5 8.7

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Corsair CMX4GX3M2A1600C9 2GB

Corsair CMD32GX4M4B2400C10 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

38 31
读取速度，GB/s

13.9 16.1
写入速度，GB/s

8.7 11.5
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 8 9 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2106 3130

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Kingston 9905471-006.A01LF 4GB

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Micron Technology TEAMGROUP-UD4-2133 16GB

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Gowe Technology Co. Ltd. GSA16G4SCL196P-26 16GB

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

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SK Hynix HYMP112U64CP8-S5 1GB

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Samsung M393B1K70QB0-CK0 8GB

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Samsung M386A4K40BB0-CRC 32GB

Samsung M386A4K40BB0-CRC 32GB