Corsair CMY16GX3M4A2133C8 4GB vs Corsair CMK16GX4M2E3200C16 8GB

总分

Corsair CMY16GX3M4A2133C8 4GB

Corsair CMY16GX3M4A2133C8 4GB

总分

Corsair CMK16GX4M2E3200C16 8GB

Corsair CMK16GX4M2E3200C16 8GB

差异规格评论

差异

Corsair CMY16GX3M4A2133C8 4GB

需要考虑的原因
Corsair CMY16GX3M4A2133C8 4GB

报告一个错误

低于PassMark测试中的延时，ns

20 31

左右 35% 更低的延时

Corsair CMK16GX4M2E3200C16 8GB

需要考虑的原因
Corsair CMK16GX4M2E3200C16 8GB

报告一个错误

更快的读取速度，GB/s

19.2 17

测试中的平均数值
更快的写入速度，GB/s

13.9 11.5

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Corsair CMY16GX3M4A2133C8 4GB

Corsair CMK16GX4M2E3200C16 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

20 31
读取速度，GB/s

17.0 19.2
写入速度，GB/s

11.5 13.9
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 8 9 PC4-17000, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

3077 3341

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Nanya Technology NT4GC64B8HG0NS-CG 4GB

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Swissbit MEU25664D6BC2EP-30 2GB

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Thermaltake Technology Co Ltd R022D408GX2-3600C18A 8GB

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Crucial Technology CT16G4SFD8266.M16FH 16GB

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Kingston K6VDX7-HYD 8GB

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Kingston 9905403-090.A01LF 4GB

Kingston CBD32D4S2S1ME-8 8GB

Kingston CBD32D4S2S1ME-8 8GB

TwinMOS 8DHE3MN8-HATP 2GB

TwinMOS 8DHE3MN8-HATP 2GB

Kingston K821PJ-MIH 16GB

Kingston K821PJ-MIH 16GB

Samsung M471B5173QH0-YK0 4GB

Samsung M471B5173QH0-YK0 4GB

G Skill Intl F4-2666C15-4GVK 4GB

G Skill Intl F4-2666C15-4GVK 4GB

Nanya Technology NT512T64U88B0BY-3C 512MB

Nanya Technology NT512T64U88B0BY-3C 512MB

A-DATA Technology AO1P32MCST2-BW4S 16GB

A-DATA Technology AO1P32MCST2-BW4S 16GB