Corsair CMY16GX3M4A2133C8 4GB vs Samsung M393A2K43DB3-CWE 16GB

总分

Corsair CMY16GX3M4A2133C8 4GB

Corsair CMY16GX3M4A2133C8 4GB

总分

Samsung M393A2K43DB3-CWE 16GB

Samsung M393A2K43DB3-CWE 16GB

差异规格评论

差异

Corsair CMY16GX3M4A2133C8 4GB

需要考虑的原因
Corsair CMY16GX3M4A2133C8 4GB

报告一个错误

低于PassMark测试中的延时，ns

20 53

左右 62% 更低的延时
更快的读取速度，GB/s

17 10.3

测试中的平均数值
更快的写入速度，GB/s

11.5 7.7

测试中的平均数值

Samsung M393A2K43DB3-CWE 16GB

需要考虑的原因
Samsung M393A2K43DB3-CWE 16GB

报告一个错误

更高的内存带宽，mbps

25600 10600

左右 2.42 更高的带宽

规格

完整的技术规格清单

Corsair CMY16GX3M4A2133C8 4GB

Samsung M393A2K43DB3-CWE 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

20 53
读取速度，GB/s

17.0 10.3
写入速度，GB/s

11.5 7.7
内存带宽，mbps

10600 25600

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 8 9 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
时序/时钟速度

7-7-7-20 / 1333 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

3077 2356

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Patriot Memory (PDP Systems) PSD416G24002 16GB

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SK Hynix HMT31GR7CFR4C-PB 8GB

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Mushkin MR[ABC]4U360JNNM8G 8GB

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Crucial Technology CT32G48C40U5.M16A1 32GB

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G Skill Intl F4-3200C16-16GTZKW 16GB

A-DATA Technology DQKD1A08 1GB

A-DATA Technology DQKD1A08 1GB

Crucial Technology BLS8G4D240FSB.M16FAD 8GB

Crucial Technology BLS8G4D240FSB.M16FAD 8GB

Crucial Technology BLT16G4D30AETA.K16FB 16GB

Crucial Technology BLT16G4D30AETA.K16FB 16GB

G Skill Intl F4-3000C16-16GTRS 16GB

G Skill Intl F4-3000C16-16GTRS 16GB

SK Hynix HMT425S6AFR6A-PB 2GB

SK Hynix HMT425S6AFR6A-PB 2GB

Micron Technology 16ATF2G64AZ-2G3E1 16GB

Micron Technology 16ATF2G64AZ-2G3E1 16GB

Samsung M378B5673EH1-CF8 2GB

Samsung M378B5673EH1-CF8 2GB

G Skill Intl F4-3600C19-8GVRB 8GB

G Skill Intl F4-3600C19-8GVRB 8GB

Kingston KVR533D2N4 512MB

Kingston KVR533D2N4 512MB

Kingston KC6844-ELG37 1GB

Kingston KC6844-ELG37 1GB