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Corsair CMZ16GX3M2A2400C10 8GB
Chun Well Technology Holding Limited D4U0830160B 8GB

Corsair CMZ16GX3M2A2400C10 8GB vs Chun Well Technology Holding Limited D4U0830160B 8GB

总分
star star star star star
Corsair CMZ16GX3M2A2400C10 8GB

Corsair CMZ16GX3M2A2400C10 8GB

总分
star star star star star
Chun Well Technology Holding Limited D4U0830160B 8GB

Chun Well Technology Holding Limited D4U0830160B 8GB

差异 规格 评论

差异

Corsair CMZ16GX3M2A2400C10 8GB 需要考虑的原因
Corsair CMZ16GX3M2A2400C10 8GB
报告一个错误
Chun Well Technology Holding Limited D4U0830160B 8GB 需要考虑的原因
Chun Well Technology Holding Limited D4U0830160B 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    32 left arrow 37
    左右 -16% 更低的延时
  • 更快的读取速度，GB/s
    17.4 left arrow 11.4
    测试中的平均数值
  • 更快的写入速度，GB/s
    12.5 left arrow 7.4
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 10600
    左右 2.01 更高的带宽

规格

完整的技术规格清单
Corsair CMZ16GX3M2A2400C10 8GB
Chun Well Technology Holding Limited D4U0830160B 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    37 left arrow 32
  • 读取速度，GB/s
    11.4 left arrow 17.4
  • 写入速度，GB/s
    7.4 left arrow 12.5
  • 内存带宽，mbps
    10600 left arrow 21300
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 7 9 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    1683 left arrow 3137

Corsair CMZ16GX3M2A2400C10 8GB RAM的比较

G Skill Intl F3-2400C11-8-SR 8GB
Corsair CMY16GX3M2A2400C11 8GB

Chun Well Technology Holding Limited D4U0830160B 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston KF548C38-16 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

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内存RAM
Corsair CMZ16GX3M2A2400C10 8GB
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内存RAM
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内存RAM
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内存RAM
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内存RAM
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