Corsair CMZ16GX3M2A2400C10 8GB vs G Skill Intl F4-3600C14-8GTZNB 8GB

总分

Corsair CMZ16GX3M2A2400C10 8GB

Corsair CMZ16GX3M2A2400C10 8GB

总分

G Skill Intl F4-3600C14-8GTZNB 8GB

G Skill Intl F4-3600C14-8GTZNB 8GB

差异规格评论

差异

Corsair CMZ16GX3M2A2400C10 8GB

需要考虑的原因
Corsair CMZ16GX3M2A2400C10 8GB

报告一个错误

G Skill Intl F4-3600C14-8GTZNB 8GB

需要考虑的原因
G Skill Intl F4-3600C14-8GTZNB 8GB

报告一个错误

低于PassMark测试中的延时，ns

22 37

左右 -68% 更低的延时
更快的读取速度，GB/s

19.6 11.4

测试中的平均数值
更快的写入速度，GB/s

17.3 7.4

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Corsair CMZ16GX3M2A2400C10 8GB

G Skill Intl F4-3600C14-8GTZNB 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

37 22
读取速度，GB/s

11.4 19.6
写入速度，GB/s

7.4 17.3
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 9 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1683 3879

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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A-DATA Technology AM2U16BC4P2-B05B 4GB

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Swissbit MEU25664D6BC2EP-30 2GB

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G Skill Intl F4-3600C19-8GSXF 8GB

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STEC (Silicon Tech) S1024R3NN2QK-I 1GB

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A-DATA Technology DDR4 2666 2OZ 4GB

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Nanya Technology M2F8G64CB8HC9N-DI 8GB

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Team Group Inc. TEAMGROUP-UD4-4133 8GB

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Smart Modular SF4641G8CK8I6GKSEG 8GB

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Kingston KHX1600C10D3/8GX 8GB

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Smart Modular SMS4WEC8C1K0446FCG 8GB

Smart Modular SMS4WEC8C1K0446FCG 8GB

Nanya Technology M2X4G64CB8HG9N-DG 4GB

Nanya Technology M2X4G64CB8HG9N-DG 4GB

Samsung M378A1G43EB1-CPB 8GB

Samsung M378A1G43EB1-CPB 8GB

G Skill Intl F2-8500CL5-2GBPI 2GB

G Skill Intl F2-8500CL5-2GBPI 2GB

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Qimonda 72T128420EFA3SB2 1GB

Qimonda 72T128420EFA3SB2 1GB

Kingston 9905701-003.A00G 16GB

Kingston 9905701-003.A00G 16GB

Samsung M3 78T5663RZ3-CF7 2GB

Samsung M3 78T5663RZ3-CF7 2GB

Kingston KHX2666C13D4/8GX 8GB

Kingston KHX2666C13D4/8GX 8GB