Corsair CMZ16GX3M2A2400C10 8GB vs Shenzen Recadata Storage Technology 8GB

总分

Corsair CMZ16GX3M2A2400C10 8GB

Corsair CMZ16GX3M2A2400C10 8GB

总分

Shenzen Recadata Storage Technology 8GB

Shenzen Recadata Storage Technology 8GB

差异规格评论

差异

Corsair CMZ16GX3M2A2400C10 8GB

需要考虑的原因
Corsair CMZ16GX3M2A2400C10 8GB

报告一个错误

Shenzen Recadata Storage Technology 8GB

需要考虑的原因
Shenzen Recadata Storage Technology 8GB

报告一个错误

低于PassMark测试中的延时，ns

22 37

左右 -68% 更低的延时
更快的读取速度，GB/s

17 11.4

测试中的平均数值
更快的写入速度，GB/s

10.5 7.4

测试中的平均数值
更高的内存带宽，mbps

19200 10600

左右 1.81 更高的带宽

规格

完整的技术规格清单

Corsair CMZ16GX3M2A2400C10 8GB

Shenzen Recadata Storage Technology 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

37 22
读取速度，GB/s

11.4 17.0
写入速度，GB/s

7.4 10.5
内存带宽，mbps

10600 19200

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 9 PC4-19200, 1.2V, CAS Supported: 11 12 13 14 15 16 17
时序/时钟速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

1683 2820

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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G Skill Intl F4-3200C14-16GTRS 16GB

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Crucial Technology CT51264BD160B.C16F 4GB

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Crucial Technology CT16G4SFD8266.C16FD1 16GB

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A-DATA Technology DQKD1A08 1GB

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Hynix Semiconductor (Hyundai Electronics) HMA451U7MFR8N-TF 4GB

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Samsung M471B5173DB0-YK0 4GB

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Avant Technology W642GU42J5213N2 16GB

Elpida EBJ21UE8BDF0-DJ-F 2GB

Elpida EBJ21UE8BDF0-DJ-F 2GB

Kingston ACR26D4U9S8MH-8 8GB

Kingston ACR26D4U9S8MH-8 8GB

Unifosa Corporation GU332G0ALEPR8H2C6F 2GB

Unifosa Corporation GU332G0ALEPR8H2C6F 2GB

Micron Technology 16ATF2G64AZ-2G1B1 16GB

Micron Technology 16ATF2G64AZ-2G1B1 16GB

Ramos Technology EWB8GB681CA3-16IC 8GB

Ramos Technology EWB8GB681CA3-16IC 8GB

Corsair CM4B16G1L3200K18K2 16GB

Corsair CM4B16G1L3200K18K2 16GB

G Skill Intl F3-1866C8-8GTX 8GB

G Skill Intl F3-1866C8-8GTX 8GB

G Skill Intl F4-3200C22-16GRS 16GB

G Skill Intl F4-3200C22-16GRS 16GB